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Emission from rare-earth ions in GaN wurtzite crystals

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Inorganic Materials Aims and scope

Abstract

Intense studies of a wide-gap direct-zone semiconductor represented by GaN wurtzite crystals doped with rare-earth ions, namely, Eu, Er, Sm, and Tm, suggest the development of an alternative (compared to that with the use of InGaN layers) technology of fabrication of light-emitting diodes of white color. The opportunities of increasing the intensity of emission of intracenter 4f transitions are demonstrated for rare-earth ions in GaN wurtzite crystals by the optimization of doping technology, concentration of rareearth ions, and use of an additionally introduced impurity. The form of electroluminescence spectra of the GaN<RE<-based structures is similar to the form of photoluminescence spectra.

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References

  1. Zavada, J.M., Jin, S.X., Nepal, N., Lin, J.Y., Jiang, H.X., Chow, P., and Hertog, B., Electroluminescent Properties of Erbium-Doped III-N Light-Emitting Diodes, Appl. Phys. Lett., 2004.vol. 84, p.1061–1064.

    Article  CAS  Google Scholar 

  2. Park, J.H. and Steckl, A.J., Laser Action in Eu-Doped GaN Thin-Film Cavity at Room Temperature, Appl. Phys. Lett., 2004, vol. 85, pp. 4588–4591.

    Article  CAS  Google Scholar 

  3. Park, J.H. and Steckl A.J., Demonstration of a Visible Laser on Silicon Using Eu-Doped GaN Thin Films, J. Appl. Phys, 2005, vol. 98, 056108-1–056108-3.

    Google Scholar 

  4. Heikenfeld, J., Garter, M., Lee, D.S., Birkhahn, R., and Steckl, A.J., Red Light Emission by Photoluminescence and Electroluminescence from Eu-Doped GaN, Appl. Phys. Lett., 1999, vol. 75, no. 9, pp. 1189–1193.

    Article  CAS  Google Scholar 

  5. Andreev, T., Liem, N.Q., Hori, Y., Tanaka, M., Oda, O., Dang, D.L.S., and Daudinet, B., Optical Transitions in Eu3+ Ions in GaN:Eu Grown by Molecular Beam Epitaxy, Phys. Rev. B, 2006, vol. 73, 195203-1–195203.

    Article  Google Scholar 

  6. Steckl, A.J. and Birkhahn, R., Visible Emission from Er-Doped GaN Grown by Solid Source Molecular Beam Epitaxy, Appl. Phys. Lett., 1998. vol. 73, pp. 1700–1703.

    Article  CAS  Google Scholar 

  7. Steckl, A.J., Garter, M., Lee, D.S., Heikenfeld, J., and Birkhan, R., Blue Emission from Tm-Doped GaN Electroluminescent Devices, Appl. Phys. Lett., 1999, vol. 75, pp. 2184–2186.

    Article  CAS  Google Scholar 

  8. Kim, J.H. and Holloway, P.H., Near-Infrared Electroluminescence at Room Temperature from Neodymium-Doped Gallium Nitride Thin Films, Appl. Phys. Lett., 2004, vol. 85, pp. 1689–1694.

    Article  CAS  Google Scholar 

  9. Birkhahn, R., Garter, M., and Steckl, A.J., Red Light Emission by Photoluminescence and Electroluminescence from Pr-Doped GaN on Si Substrates, Appl. Phys. Lett., 1999, vol. 74, pp. 2161–2163.

    Article  CAS  Google Scholar 

  10. Sawahata, J., Seo, J., Chen, S., Takiguchi, M., Saito, D., Nemoto, S., and Akimoto, K., Photoluminescence Spectra of Eu-doped GaN with Various Eu Concentrations, Appl. Phys. Lett., 2006, vol. 89, p.192104-1–192104.

    Article  Google Scholar 

  11. Bodiou, L., Braud, A., Doualan, J.-L., Moncorgé, R., Park, J.H., Munasinghe, C., Steckl, A.J., Lorenz, K., Alves, E., and Daudin, B., Optically Active Centers in Eu Implanted, Eu in situ Doped GaN, and Eu Doped GaN Quantum Dots, J. Appl. Phys., 2009, vol. 105, pp. 043107-1–043107.

    Article  Google Scholar 

  12. Andreev, T., Monroy, E.T., Gayral, B., Daudin, B., and Liem, N.Q., Eu Locations in Eu-Doped InGaN/GaN Quantum Dots, Appl. Phys. Lett., 2005, vol. 87, pp. 021906-1–021906.

    Google Scholar 

  13. Krivolapchuk, V.V., Mezdrogina, M.M., Nasonov, A.V., Rodin, S.N., Photoluminescence of GaN Bulk Crystals Doped with Eu, Fotolyuminestsentsiya ob’emnykh kristallov GaN, legirovannykh Eu, Fiz. Tverd. Tela, 2003, vol. 45, no. 9, pp. 1556–1559.

    Google Scholar 

  14. Krivolapchuk, V.V., Lundin, V.V., Mezdrogina, M.M., Nasonov, A.V., Rodin, S.N., and Shmidt, N.M., Spectra of Edge Photoluminescence and Intensity of Lines of Intracenter f-f Transitions in GaN Crystals Doped by Er, Sm, Spektry kraevoi fotolyuminestsentsii i intensivnost’ linii vnutritsentrovykh f-f-perekhodov v kristallakh GaN, legirovannykh Er, Sm, Fiz. Tverd. Tela, vol. 46, no. 5, pp. 814–819.

  15. Cho, H.K., Lee, J.Y., Song, J.H., Yu, P.W., Yang, G.M., and Kim, C.S., Influence of Strain-Induced Indium Clustering on Characteristics of InGaN/GaN Multiple Quantum Wells with High Indium Composition, J. Appl. Phys., 2002, vol. 91.pp. 1104–1108.

    Article  CAS  Google Scholar 

  16. Van Vleck, J.H., On the Role of Dipole-Dipole Coupling in Dielectric Media, J. Chem. Phys., 1937, vol. 41, pp. 67–83.

    Article  Google Scholar 

  17. Judd, B.R., Optical Absorption Intensities of Rare-Earth Ions, Phys. Rev., 1962, vol. 127, pp. 750–759.

    Article  CAS  Google Scholar 

  18. Ofelt, G.S., Intensities of Crystal Spectra of Rare-Earth Ions, J. Chem. Phys., 1962, vol. 37, pp. 511–528.

    Article  CAS  Google Scholar 

  19. Gaiduk, M.I., Zolin, V.F., and Gaigerova, L.S., Spektry lyuminestsentsii evropiya (Luminescence Spectra of Europium), Moscow: Nauka, 1974.

    Google Scholar 

  20. Dieke, G.H., Spectra and Energy Levels of Rare Earth Ions in Crystals, New York: Wiley, 1969.

    Google Scholar 

  21. Dorenbos, P. and van der Kolk, E., Location of Lanthanide Impurity Levels in the III-V Semiconductor GaN, Appl. Phys. Lett., 2006, vol. 89, 061122-1–061122.

    Article  Google Scholar 

  22. Hori, Y., Andreev, R., Jalabert, D., Monroy, E., Dang, L.S., Daudin, B., Tanaka, M., and Oda, O., GaN Quantum Dots Doped with Tb, Appl. Phys. Lett., 2006, vol. 88, 053102-1–053102.

    Article  Google Scholar 

  23. Zavada, J.M., Mair, R.A., Ellis, C.J., Lin, J.Y., Jiang, H.X., Wilson, R.G., Grudowski, P.A., and Dupuis, R.D., Optical Transitions in Pr-Implanted GaN, Appl. Phys. Lett., 1999, vol. 75, pp. 790–793.

    Article  CAS  Google Scholar 

  24. Krivolapchuk, V.V., Mezdrogina, M.M., Raevskii, S.D., Skvortsov, A.P., and Yusupova, S.A., Absorption Spectra of Gallium Nitride Crystals Doped by Erbium Ions, Spektry pogloshcheniya kristallov nitrida galliya, legirovannykh ionami erbiya, Pis’ma Zh. Tekh. Fiz., 2002, vol. 28, no. 7, pp. 19–21.

    Google Scholar 

  25. Bang, H., Morishima, S., Li, Z., Akimoto, K., Nomura, M., and Yagi, E., MBE Growth of Eu- or Tb-Doped GaN and its Optical Properties, J. Cryst. Growth, 2002, vols. 237–239, pp. 1027–1032.

    Article  Google Scholar 

  26. Wahl, U., Vantomme, A., Langouche, G., Araujo, J.P., and Peralta, L., Emission Channeling Studies of Pr in GaN, J. Appl. Phys., 2000, vol. 88, pp. 1319–1321.

    Article  CAS  Google Scholar 

  27. Kim, S., Rhee, S.J., Li, X., Coleman, J.J., and Bishop, S.G., Photoluminescence and Photoluminescence Excitation Spectroscopy of Multiple Nd3+ Sites in Nd-Implanted GaN, Phys. Rev. B, 1998, vol. 57, pp. 14588–14591.

    Article  CAS  Google Scholar 

  28. Kim, S., Rhee, S.J., Li, X., Coleman, J.J., Bishop, S.G., and Klein, P.B., Selective Enhancement of 1540 nm Er3+ Emission Centers in Er-Implanted GaN by Mg Co-Doping, Appl. Phys. Lett., 2000, vol. 76, pp. 2403–2407.

    Article  CAS  Google Scholar 

  29. Lozykowski, H.J., Kinetics of Luminescence of Isoelectronic Rare-Earth Ions in III-V Semiconductors, Phys. Rev. B, 1993, vol. 48, pp. 17758–17770.

    Article  CAS  Google Scholar 

  30. Lee, C.-W., Everitt, H.O., Lee., D.S., and Steckl, A.J., Temperature Dependence of Energy Transfer Mechanisms in Eu-Doped GaN, J. Appl. Phys., 2004, vol. 95, no. 12, pp. 7717–7722.

    Article  CAS  Google Scholar 

  31. Filhol, J.-S., Jones, R., Shaw, M.J., and Briddon, P.R., Structure and Electrical Activity of Rare-Earth Dopants in GaN, Appl. Phys. Lett., 2004, vol. 84, no. 15, pp.2841–2845.

    Article  CAS  Google Scholar 

  32. Citrin, P.H., Northrup, P.A., Birkhahn, R., and Steckl, A.J., Local Structure and Bonding of Er in GaN: A Contrast with Er in Si, Appl. Phys. Lett., 2000, vol. 76, pp. 2865–2868.

    Article  CAS  Google Scholar 

  33. Zhilyaev, Yu.V., Krivolapchuk, V.V., Mezdrogina, M.M., Raevskii, S.D., Skvortsov, A.P., and Yusupova, Sh.A., Spektry fotolyuminestsentsii ob’emnykh kristallov GaN, Abstracts of Papers, International Workshop “Foto- i elektrolyuminestsentsiya RZI v poluprovodnikakh i dielektrikakh” (Photo- and Electroluminescence of REI in Semi-conductors and Isolators), St. Petersburg, 2001, p.27.

  34. Mattila, T. and Nieminen, R.M., Point-Defect Complexes and Broadband Luminescence in GaN and AlN, Phys. Rev. B, 1997, vol. 55, pp. 9571–9574.

    Article  CAS  Google Scholar 

  35. Thiel, V., Cruguel, H., Wu, H., Sun, Y., Lapeyre, G.J., Cone, P.L., Equal, R.W., and Macfarlane, P.M., Systematics of 4f Electron Energies Relative to Host Bands by Resonant Photoemission of Rare-Earth Ions in Aluminum Garnets, Phys. Rev. B, 2001, vol. 64, pp. 085107–08512.

    Article  Google Scholar 

  36. Thomas, D.G. and Hopfield, J.J., Isoelectronic Traps due to Nitrogen in Gallium Phosphide, Phys. Rev., 1966, vol. 150, pp. 680–690.

    Article  CAS  Google Scholar 

  37. Allen, J.W., Isoelectronic Impurities in Semiconductors: a Survey of Binding Mechanisms, J. Phys. C, 1971, vol. 4, pp. 1936–1941.

    Article  CAS  Google Scholar 

  38. Ruhle, W., Schmid, W., Meek, R., Stath, N., Fischbach, J.U., Strottner, I., Benz, K.W., and Pilkuhn, M., Isoelectronic Impurity States in Direct-Gap III-V Compounds: The Case of InP: Bi, Phys. Rev. B, 1978, vol. 18, pp. 7022–7032.

    Article  Google Scholar 

  39. Suchocki, A., and Langer, J.M., Auger Effect in the Mn2+ Luminescence of CdF2:(Mn,Y) Crystals, Phys. Rev. B, 1989, vol. 39, pp. 7905–7909.

    Article  CAS  Google Scholar 

  40. Moos, H.W., Spectroscopic Relaxation Processes of Rare Earth Ions in Crystals, J. Lumin., 1970, vols. 1–2, pp. 106–115.

    Article  Google Scholar 

  41. Wilson, B.A., Yen, W.M., Hagarty, J., and Imbusch, G.F., Luminescence from Pure MnF2 and from MnF2 Doped with Eu3+ and Er3+, Phys. Rev. B, 1979, vol. 19, pp. 4238–4242.

    Article  CAS  Google Scholar 

  42. Gomes, L., Courrol, L.C., Tarelho, L.V., and Ranieri, I.M., Cross-Relaxation Process between +3 Rare-Earth Ions in LiYF4 Crystals, Phys. Rev. B, vol. 54, pp. 3825–3830.

  43. Wu, H., Poitras, C.B., Lipson, M., Spencer, M.G., Hunting, J., and DiSalvo, F.J., Photoluminescence and Cathodoluminescence Analyses of GaN Powder Doped with Eu, Appl. Phys. Lett., 2006, vol. 88, pp. 011921-1–011921-5.

    Google Scholar 

  44. Wang, R., Steckl, A.J., Brown, E.E., Hommerich, U., and Zavada, J.M., Effect of Si Codoping on Eu3+ Luminescence in GaN, J. Appl. Phys., 2009, vol. 105, pp. 043107?1-043107-043107?3.

    Article  Google Scholar 

  45. Bang, H., Morishima, S., Sawahata, J., Seo, J., Takiguchi, M., Tsunemi, M., Akimoto, K., and Nomura, M., Concentration Quenching of Eu-Related Luminescence in Eu-Doped GaN, Appl. Phys. Lett., 2004, vol. 85, pp. 227–232.

    Article  CAS  Google Scholar 

  46. Lee, D.S., Heikenfeld, J., Steckl, A.J., Hommerich, U., Seo, J.T., Braud, A., and Zavada, J., Optimum Er Concentration for In Situ Doped GaN Visible and Infrared Luminescence, Appl. Phys. Lett., 2001, vol. 79, no. 6, pp. 719–723.

    Article  CAS  Google Scholar 

  47. Priolo, F., Franzo, G., Coffa, S., and Polman, A., The Erbium-Impurity Interaction and its Effects on the 1.54 μm Luminescence of Er3+ in Crystalline Silicon, J. Appl. Phys., 1995, vol. 78, no. 6, pp. 3874–3878.

    Article  CAS  Google Scholar 

  48. Krivolapchuk, V.V., Mezdrogina, M.M., Kozhanova, Yu.V., Rodin, S.N., Photoluminescence of GaN Bulk Crystals Doped with Eu, Sensibilizatsiya lyuminestsentsii vyurtsitnykh kristallov GaN, legirovannykh Eu i dopolnitel’no vvedennoi primes’yu Zn, Fiz. Tekh. Poluprovodn., 2006, vol. 40, no. 9, pp. 1033–1041.

    Google Scholar 

  49. Mezdrogina, M.M., Krivolapchuk, V.V., Petrov, V.N., Rodin, S.N., and Cherenkov, A.V., Effect of Additionally Introduced Zn and Eu Impurities on the View of Photoluminescence Spectra of GaN Crystals Doped by Er, Vliyanie dopolnitel’no vvedennykh primesei Zn i Eu na vid spektrov fotolyuminestsentsii kristallov GaN, legirovannykh Er, Fiz. Tekh. Poluprovodn., 2006, vol. 40, no. 12, pp. 1412–1419.

    Google Scholar 

  50. Krivolapchuk, V.V. and Mezdrogina, M.M., After-Glow of Wurtzite Crystals GaN Doped by Rare-Earth Metals, Poslesvechenie vyurtsitnykh kristallov GaN, legirovannykh redkozemel’nymi metallami, Fiz. Tverd. Tela, 2004, vol. 46, no. 12, pp. 2129–2134.

    Google Scholar 

  51. Mezdrogina, M.M., Danilovskii, E.Yu., and Kuz’min, R.V., Sensibilization of Emission and Migration Mechanisms of Electron Excitations in Structures on the Basis of III-Nitrides Doped by Rare-Earth Elements, Sensibilizatsiya izlucheniya i mekhanizmy migratsii elektronnykh vozbuzhdenii v strukturakh na osnove III-nitridov, legirovannykh redkozemel’nymi elementami, Fiz. Tekh. Poluprovodn., 2010, vol. 44, no. 3, pp. 338–347.

    Google Scholar 

  52. Mezdrogina, M.M., Krivolapchuk, V.V., Petrov, V.N., Kozhanova, Yu.V., Danilovskii, E.Yu., and Kuz’min, R.V., Doping Mechanisms and Intensity of Emission of Intracenter f-f Transitions of Doping Impurity Eu in Structures with Quantum Wells InxGa1 − x N/GaN, Mekhanizmy legirovaniya i intensivnost’ izlucheniya vnutritsentrovykh f-f-perekhodov legiruyushchei primesi Eu v strukturakh s kvantovymi yamami In xGa1 − x N/GaN, Fiz. Tekh. Poluprovodn., 2009, vol. 43, no. 4, pp. 467–477.

    Google Scholar 

  53. Lee, D.S., and Steckl, A.J., Selective Enhancement of Blue Electroluminescent from GaN:Tm, Appl. Phys. Lett., 2003, vol. 82, no.1, p. 55.

    Article  CAS  Google Scholar 

  54. Tanaka, S., Morimoto, S., Yamada, K., Kobuyashi, H., Zhang, Z., and Jang, X., Excitation Mechanisms Tm in ZnS, J. Cryst. Growth, 1992, vol. 117, p.997.

    Article  CAS  Google Scholar 

  55. Steckl, A.J., Garter, M., Birkhan, R., and Scofield, J., Green Eectroluminescence from Er-Doped GaN Schottky Barrier Diodes, Appl. Phys. Lett., 1998, vol. 73, no. 17, p.2450.

    Article  CAS  Google Scholar 

  56. Heikenfeld, J., Lee, D.S., Garter, M., Birkhan, R., and Steckel, A.J., Low-Voltage GaN:Er Electroluminescent Devices, Appl. Phys. Lett., 2000, vol. 76, no. 11, p.1365.

    Article  CAS  Google Scholar 

  57. Lee, D.S., and Steckel, A.J., Enhanced Blue and Green Emission in Rare-Earth-Doped Electroluminescent Devices by Optical Photopumping, Appl. Phys. Lett., 2002, vol. 81, no. 13, p.2331.

    Article  CAS  Google Scholar 

  58. Heikenfeld, J., Lee, D.S., Garter, M., Birkhan, R., and Steckel, A.J., Red Light Emission and Electroluminescence from Eu-Doped GaN, Appl. Phys. Lett., 1999, vol. 75, no. 9, p.1189.

    Article  CAS  Google Scholar 

  59. Birkhahn, R., Garter, M., and Steckel, A.J., Red Light Emission and Electroluminescence from Pr Doped GaN on Si Substrates, Appl. Phys. Lett., 1999, vol. 74, no. 15, p.2161.

    Article  CAS  Google Scholar 

  60. Lee, D.S., Heikenfield, J., Birkhahn, R., Garter, M., Lee, B.K., and Steckel, A.J., Voltage-Controlled Yellow or Orange Emission from GaN Codoped with Er and Eu, Appl. Phys. Lett., 2000, vol. 76, no. 12, 1525, 61.

    Article  CAS  Google Scholar 

  61. Fuijawara, Y., Nishikawa, A., and Teray, Y., Room Temperature Operation of Red Light-Emitting Diodes with Europium-Doped Gallium Nitride Grown by Organometallic Vapor Phase Epitaxy, Abstracts of Papers, 15 International Workshop on Inorganic and Organic Electroluminescence, 2010, p.210, International Conference on the Science and Technology of Emissive Displays and Lighting, 18 Advanced Display Technologies International Symposium, St-Petersburg State of Technology(Technical University) St-Petersburg, Sep. 27–Oct. 1, 2010.

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  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia

    M. M. Mezdrogina, E. Yu. Danilovskii & R. V. Kuz’min

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Mezdrogina, M.M., Danilovskii, E.Y. & Kuz’min, R.V. Emission from rare-earth ions in GaN wurtzite crystals. Inorg Mater 47, 1450–1469 (2011). https://doi.org/10.1134/S0020168511130048

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