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Electrical conductivity of undoped and rare-earth-doped high-resistivity GaSe crystals

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Abstract

The time-dependent conductivity of nominally undoped and rare-earth-doped (N R≃10−5 to 10−1 at % Gd, Dy, or Ho) high-resistivity gallium selenide crystals has been measured under various conditions. At a relatively low applied voltage and T ≤ 150 K, the conductivity of the crystals reaches a steady-state value rather slowly. When a voltage above a certain threshold is applied for a long time at T ≤ 300 K, the material exhibits electric fatigue. An energy-band model is proposed which provides qualitative explanation of the results.

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Authors and Affiliations

  1. Baku State University, ul. Khalilova 23, Baku, AZ1145, Azerbaijan

    A. Sh. Abdinov, Sh. A. Allakhverdiev, R. F. Babaeva & R. M. Rzaev

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  1. A. Sh. Abdinov
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  2. Sh. A. Allakhverdiev
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  3. R. F. Babaeva
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  4. R. M. Rzaev
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Correspondence to A. Sh. Abdinov.

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Original Russian Text © A.Sh. Abdinov, Sh.A. Allakhverdiev, R.F. Babaeva, R.M. Rzaev, 2009, published in Neorganicheskie Materialy, 2009, Vol. 45, No. 7, pp. 785–789.

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Abdinov, A.S., Allakhverdiev, S.A., Babaeva, R.F. et al. Electrical conductivity of undoped and rare-earth-doped high-resistivity GaSe crystals. Inorg Mater 45, 723–727 (2009). https://doi.org/10.1134/S0020168509070036

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  • DOI: https://doi.org/10.1134/S0020168509070036

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