Skip to main content
SpringerLink
Log in

Silicide formation during heat treatment of thin Ni-Pt and Ni-Pd solid-solution films and Pt/Ni bilayers on (111)Si

  • Published:
Inorganic Materials Aims and scope

Abstract

It is shown that isothermal heat treatment of (Ni-Pt)/Si and Pt/Ni/Si heterostructures leads to the formation of oriented Ni-and Pt-based silicide solid solutions. Owing to the three equivalent azimuth orientations in the basic lattice orientation relationship for the Si-Ni1−x PtxSi system, the resulting silicides have a nanocrystalline substructure. The stability of the substructure is due to the optimal interfacial lattice match and near-special grain-boundary misorientations. The silicide phases Ni1−x PtxSi and Pt1−y NiySi (or Ni1−x PdxSi and Pd1−y NiySi) may undergo segregation, having the same lattice orientation. In both systems, the segregation is associated with the predominant Ni diffusion. The second component (Pt) is shown to stabilize the orthorhombic Ni-based silicide and to prevent NiSi2 formation. Photon processing accelerates diffusion and leads to the formation of phase-pure Ni1−x PtxSi solid solutions.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Tu, K., Mayer, J., and Poate, J., Silicide Formation, Thin Films: Interdiffusion and Reactions, Poate, J., Tu, K., and Mayer, J., Eds., New York, Wiley, 1978. Translated under the title Tonkie plenki. Vzaimnaya diffuziya i reaktsii, Moscow: Mir, 1982, pp. 361–407.

    Google Scholar 

  2. Murarka, S.P., Silicides for VLSI Applications, New York: Academic, 1983. Translated under the title Silitsidy dlya SBIS, Moscow: Mir, 1986.

    Google Scholar 

  3. Tu, K. N., Alessandrini, E.I., Chu, W.K., et al., A Study of Thin Films Nickel Silicides Formation, Jpn. J. Appl. Phys., 1974, suppl., vol. 2, part 1, pp. 669–776.

    Google Scholar 

  4. Olowolerfe, J.O., Nicolet, M.A., and Mayer, J.W., Influence of the Nature of the Si Substrate on Nickel Silicide Formed from Thin Ni Films, Thin Solid Films, 1976, vol. 38, no. 2, pp. 143–150.

    Google Scholar 

  5. Foll, H., Ho, P.S., and Tu, K.N., Transmission Electron Microscopy of the Formation of Nickel Silicides, Philos. Mag. A, 1982, vol. 45, no. 1, pp. 31–47.

    CAS  Google Scholar 

  6. Ievlev, V.M., Markushev, B.N., and Kushchev, S.B., Dislocation Structure of Interfaces between NiSi2 and Vicinal (111)Si Surfaces, Vestn. Voronezh. Gos. Tekh. Univ., 2000, no. 1.8, pp. 102–104.

  7. Poate, J.M. and Tisone, T.C., Kinetics and Mechanism of Platinum Silicide Formation on Silicon, Appl. Phys. Lett., 1974, vol. 24, no. 8, pp. 391–393.

    Article  CAS  Google Scholar 

  8. Bindell, J.B., Colby, J.W., Wonsidler, D.R., et al., An Analytical Study of Platinum Silicide Formation, Thin Solid Films, 1976, vol. 37, pp. 441–452.

    Article  CAS  Google Scholar 

  9. Chen, J.R., Heh, T.S., and Lin, M.P., Epitaxial Growth of Platinum Silicide Layers on (111)Si Substrates, Surf. Sci., 1985, vol. 162, pp. 657–662.

    Article  CAS  Google Scholar 

  10. Kawarada, H., Ohdomary, I., and Horiuchy, S., Structural Study of Pt/(111)Si Interface with High Resolution Electron Microscopy, Jpn. J. Appl. Phys., 1984, vol. 54, no. 9, pp. 5081–5086.

    Google Scholar 

  11. Natan, M., Anomalous First-Phase Formation in Rapidly Thermal Annealed, Thin-Layered Si/Ni/Si Films, Appl. Phys. Lett., 1986, vol. 49, no. 5, pp. 257–259.

    Article  CAS  Google Scholar 

  12. Borisenko, V.E., Tverdofaznye protsessy v poluprovodnikakh pri impuls’snom nagreve (Pulsed-Heating-Induced Solid-State Processes in Semiconductors), Minsk: Nauka i Tekhnika, 1992.

    Google Scholar 

  13. Ievlev, V.M., Kushchev, S.B., and Zlobin, V.P., Structure and Composition of Silicides Produced by Photon Annealing of Pt on Si, Fiz. Khim. Obrab. Mater., 1986, no. 2, pp. 128–130.

  14. Zlobin, V.P., Phase Composition, Structure, and Orientation of Pt, Pd, and Ni Silicide Films Produced by Pulsed Photon Annealing, Cand. Sci. (Phys.-Math.) Dissertation, Voronezh: Voronezh Pedagogical Inst., 1988.

    Google Scholar 

  15. Baeri, P., Grimaldi, M.G., Rimini, E., and Gelotti, G., Pulsed Laser Irradiation of Nickel Films on Silicon, J. Phys.: Condens. Matter, 1983, vol. 44, pp. 449–454.

    Google Scholar 

  16. Harper, R.E., Epitaxial Nickel Disilicide Formation by Electron Beam Annealing, Mater. Res. Soc. Symp. Proc., 1984, vol. 25, pp. 105–110.

    CAS  Google Scholar 

  17. Ottaviani, G., Tu, K.N., Chu, W.K., et al., NiSi Formation at the NiPt/Si System, J. Appl. Phys., 1982, vol. 53, no. 7, pp. 4903–4906.

    Article  CAS  Google Scholar 

  18. Mantovani, S., Nava, F., Nobili, C., et al., Pt-Ni Bilayers on n-Type Silicon: Metallurgical and Electrical Behavior, J. Appl. Phys., 1984, vol. 55, pp. 899–908.

    Article  CAS  Google Scholar 

  19. Hansen, M. and Anderko, K., Constitution of Binary Alloys, New York: McGraw-Hill, 1958, 2nd ed. Translated under the title Struktura dvoinykh splavov, Moscow: Metallurgizdat, 1962, vol. 2.

    Google Scholar 

  20. Handbook of Semiconductor Technology, vol. 1: Electronic Structure and Properties of Semiconductors, Jackson, K.A. and Schröter, W., Eds., Weinheim: Wiley-VCH, 2000. Translated under the title Entsiklopediya tekhnologii poluprovodnikovykh materialov, vol. 1: Elektronnaya struktura i svoistva poluprovodnikov, Voronezh: Vodolei, 2004.

    Google Scholar 

  21. Ievlev, V.M., Serbin, O.V., Kushchev, S.B., and Belonogov, E.K., Photon Activation of the Synthesis of Tungsten Carbide Films, Trudy XIX Vserossiiskogo soveshchaniya po temperaturoustoichivym funktsionals’nym pokrytiyam (Proc. XIX All-Russia Conf. on High-Temperature Functional Coatings), St. Petersburg, 2003, vol. 1, pp. 162–165.

    Google Scholar 

  22. Ievlev, V.M., Turaeva, T.L., Latyshev, A.N., and Selivanov, V.N., Photon Activation of Metal Film Recrystallization, Dokl. Akad. Nauk, Ser. Fiz. Khim., 2003, vol. 4, pp. 508–510.

    Google Scholar 

  23. Ievlev, V.M., Latyshev, A.N., Kovneristyi, Yu.V., et al., Nonradiative Decay of Electronic Excitations and Solid-State Processes, 9 Konferentsiya po fizicheskoi khimii poluprovodnikov, FKhP-9 (9th Conf. on the Physical Chemistry of Semiconductors, FKhP-9), Kemerovo, 2004, no. 1, pp. 139–142.

  24. Ievlev, V.M. and Isaev A.Yu., Heteroepitaxial Structures for the Growth of HTSC Films on Metal and Semiconducting Substrates, Proc. 7th Int. Workshop on Critical Currents in Superconductors, Alpbach, 1994, pp. 633–638.

  25. Tu, K.N., J. Vac. Sci. Technol., 1981, vol. 19, no. 3, pp. 766–777.

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Voronezh State Technical University, Moskovskii pr. 14, Voronezh, 394026, Russia

    V. M. Ievlev, E. V. Shvedov, S. A. Soldatenko, S. B. Kushchev & Yu. V. Gorozhankin

Authors
  1. V. M. Ievlev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. E. V. Shvedov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. A. Soldatenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. S. B. Kushchev
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Yu. V. Gorozhankin
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Original Russian Text © V.M. Ievlev, E.V. Shvedov, S.A. Soldatenko, S.B. Kushchev, Yu.V. Gorozhankin, 2006, published in Neorganicheskie Materialy, 2006, Vol. 42, No. 2, pp. 187–195.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Ievlev, V.M., Shvedov, E.V., Soldatenko, S.A. et al. Silicide formation during heat treatment of thin Ni-Pt and Ni-Pd solid-solution films and Pt/Ni bilayers on (111)Si. Inorg Mater 42, 151–159 (2006). https://doi.org/10.1134/S0020168506020087

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S0020168506020087

Keywords

Search

Navigation