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Applicability of a simplified Shockley-Read-Hall model to semiconductors with various types of defects

  • Electronic and Optical Properties of Semiconductors
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Abstract

Restrictions imposed on the maximum defect concentration at which the conventional assumption of the Shockley-Read-Hall recombination theory (the equality of electron and hole lifetimes) is still applicable are studied. Using the example of doped silicon, the dependence of this concentration on the injection level and various defect parameters is considered. The cases where the semiconductor contains defects of only one type and of several types are investigated. The performed analysis allows us to determine the sample parameters for which the lifetimes of charge carriers can be calculated using a simplified recombination model.

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Authors and Affiliations

  1. Institute of Solid-State and Semiconductor Physics, Belarussian Academy of Sciences, ul. Brovki 17, Minsk, 220072, Belarus

    A. N. Yashin

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  1. A. N. Yashin
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 11, 2005, pp. 1331–1335.

Original Russian Text Copyright © 2005 by Yashin.

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Yashin, A.N. Applicability of a simplified Shockley-Read-Hall model to semiconductors with various types of defects. Semiconductors 39, 1285–1289 (2005). https://doi.org/10.1134/1.2128451

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  • DOI: https://doi.org/10.1134/1.2128451

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