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Study of the properties of Hg1−x−y−z CdxMnyZnzTe as a new infrared optoelectronic material

  • Electronic and Optical Properties of Semiconductors
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Abstract

The physical parameters of a new five-component HgCdMnZnTe semiconductor alloy are studied. It is shown that this material is quite competitive with HgCdTe, i.e., the basic material for photoelectronics in infrared ranges of 3–5 and 8–14 μm.

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Authors and Affiliations

  1. Fed’kovich State University, ul. Kotsyubinskogo 2, Chernovtsy, 58012, Ukraine

    I. N. Gorbatyuk, S. E. Ostapov, S. G. Dremlyuzhenko, R. A. Zaplitnyi, I. M. Fodchuk, V. V. Zhikharevich & V. G. Deibuk

  2. Usikov Institute for Radiophysics and Electronics, National Academy of Sciences of Ukraine, Kharkov, 61085, Ukraine

    N. A. Popenko, I. V. Ivanchenko, A. A. Zhigalov & S. Yu. Karelin

Authors
  1. I. N. Gorbatyuk
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  2. S. E. Ostapov
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  3. S. G. Dremlyuzhenko
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  4. R. A. Zaplitnyi
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  5. I. M. Fodchuk
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  6. V. V. Zhikharevich
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  7. V. G. Deibuk
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  8. N. A. Popenko
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  9. I. V. Ivanchenko
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  10. A. A. Zhigalov
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  11. S. Yu. Karelin
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Additional information

__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 9, 2005, pp. 1053–1058.

Original Russian Text Copyright © 2005 by Gorbatyuk, Ostapov, Dremlyuzhenko, Zaplitny\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Fodchuk, Zhikharevich, De\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)buk, Popenko, Ivanchenko, Zhigalov, Karelin.

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Gorbatyuk, I.N., Ostapov, S.E., Dremlyuzhenko, S.G. et al. Study of the properties of Hg1−x−y−z CdxMnyZnzTe as a new infrared optoelectronic material. Semiconductors 39, 1017–1022 (2005). https://doi.org/10.1134/1.2042590

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  • DOI: https://doi.org/10.1134/1.2042590

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