Abstract
The generation of prismatic dislocation loops in strained quantum dots is investigated. The quantum dots are embedded in a film-substrate heterostructure with mechanical stresses caused by the difference between the lattice parameters of the film (heterolayer) and the substrate. The intrinsic plastic strain ɛm of a quantum dot arises from the misfit between the lattice parameters of the materials of the quantum dot and the surrounding matrix. The interface between the heterolayer and the substrate is characterized by a misfit parameter f. The critical radius of a quantum dot R c at which the generation of a dislocation loop in the quantum dot becomes energetically favorable is analyzed as a function of the intrinsic plastic strain ɛm and the misfit parameter f.
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Translated from Fizika Tverdogo Tela, Vol. 46, No. 9, 2004, pp. 1593–1598.
Original Russian Text Copyright © 2004 by Kolesnikova, Romanov.
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Kolesnikova, A.L., Romanov, A.E. Generation of dislocation loops in strained quantum dots embedded in a heterolayer. Phys. Solid State 46, 1644–1648 (2004). https://doi.org/10.1134/1.1799180
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DOI: https://doi.org/10.1134/1.1799180