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Intensity of intersubband electron scattering by polar optical phonons in semiconductor quantum wires with account of energy level broadening

  • Low-Dimensional Systems and Surface Physics
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Abstract

An approach describing the effect of energy level broadening in semiconductor quantum wires on the intensity of intersubband electron scattering by polar optical phonons is suggested. As a broadening mechanism, scattering by atomic thermal vibrations and by the roughness of the confining surfaces of a quantum system is considered. It is shown that in this case the dependence of the intensity of intersubband scattering of electrons on their kinetic energy has no singularities.

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Authors and Affiliations

  1. Belarussian State University, ul. F. Skarina 4, Minsk, 220050, Belarus

    D. V. Pozdnyakov & V. M. Borzdov

Authors
  1. D. V. Pozdnyakov
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  2. V. M. Borzdov
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__________

Translated from Fizika Tverdogo Tela, Vol. 45, No. 12, 2003, pp. 2238–2241.

Original Russian Text Copyright © 2003 by Pozdnyakov, Borzdov.

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Pozdnyakov, D.V., Borzdov, V.M. Intensity of intersubband electron scattering by polar optical phonons in semiconductor quantum wires with account of energy level broadening. Phys. Solid State 45, 2348–2351 (2003). https://doi.org/10.1134/1.1635510

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