Abstract
This paper reports on the results of investigations into the dislocation mobility in n-Si single crystals (N d =5×1024 m−3) upon simultaneous exposure to electric (j=3×105 A/m2) and magnetic (B≤1 T) fields. It is found that the introduction of dislocations (≈109 m−2) into dislocation-free silicon doped with phosphorus leads to the appearance of the paramagnetic component of the magnetic susceptibility. The paramagnetic component increases with an increase in the dopant concentration. Similar transformations in silicon account for the formation of magnetically sensitive impurity stoppers that respond to external magnetic perturbations. An analysis of the behavior of dislocations in electric and magnetic fields has revealed a parabolic dependence of the dislocation path length on the magnetic induction B. The effective charges and mobilities of dislocations are numerically calculated from the results obtained. A model is proposed according to which the observed increase in the dislocation mobility is associated with the decrease in the retarding power of magnetically sensitive stoppers due to a local change in the magnetic characteristics of the material and the spin-dependent reactions stimulated by a magnetic field.
Similar content being viewed by others
References
T. Suzuki, H. Yosinaga, and S. Takeucti, Dislocation Dynamics and Plasticity (Syokabo, Tokyo, 1986; Mir, Moscow, 1989).
V. B. Shikin and Yu. V. Shikina, Usp. Fiz. Nauk 165(8), 887 (1995) [Phys. Usp. 38, 845 (1995)].
J. P. Hirth and J. Lothe, Theory of Dislocations (McGraw-Hill, New York, 1967; Atomizdat, Moscow, 1972).
N. K. Nechvolod, Creep of Crystalline Materials at Low Temperatures (Vysshaya Shkola, Kiev, 1980).
Yu. I. Golovin and R. B. Morgunov, Zh. Éksp. Teor. Fiz. 115(2), 605 (1999) [JETP 88, 332 (1999)].
V. I. Al’shits, E. V. Darinskaya, and O. L. Kazakova, Zh. Éksp. Teor. Fiz. 111(2), 615 (1997) [JETP 84, 338 (1997)].
Yu. I. Golovin and R. B. Morgunov, Fiz. Tverd. Tela (St. Petersburg) 40(11), 2065 (1998) [Phys. Solid State 40, 1870 (1998)].
Yu. I. Golovin and R. B. Morgunov, Fiz. Tverd. Tela (St. Petersburg) 39(4), 630 (1997) [Phys. Solid State 39, 550 (1997)].
Yu. I. Golovin and R. B. Morgunov, Pis’ma Zh. Éksp. Teor. Fiz. 58(3), 189 (1993) [JETP Lett. 58, 191 (1993)].
A. A. Urusovskaya, V. I. Al’shits, and N. N. Bekkauér, Fiz. Tverd. Tela (St. Petersburg) 42(2), 267 (2000) [Phys. Solid State 42, 274 (2000)].
A. A. Skvortsov, A. M. Orlov, and A. A. Solov’ev, Fiz. Tverd. Tela (St. Petersburg) 43(4), 616 (2001) [Phys. Solid State 43, 640 (2001)].
S. V. Vonsovskii, Magnetism (Nauka, Moscow, 1971; Wiley, New York, 1974).
V. G. Antonov, L. M. Petrov, and A. P. Shchelkin, Instruments for Measurement of Magnetic Parameters of Materials (Énergoatomizdat, Leningrad, 1986).
I. V. Aleksandrov, Theory of Magnetic Relaxation (Nauka, Moscow, 1975).
V. I. Al’shits, E. V. Darinskaya, and T. M. Perekalina, Fiz. Tverd. Tela (Leningrad) 29(2), 467 (1987) [Sov. Phys. Solid State 29, 265 (1987)].
P. C. Tripathy and T. N. Sahu, Semicond. Sci. Technol. 10(4), 447 (1995).
A. A. Skvortsov, A. M. Orlov, V. A. Frolov, and A. A. Solov’ev, Fiz. Tverd. Tela (St. Petersburg) 42(11), 1998 (2000) [Phys. Solid State 42, 2054 (2000)].
Author information
Authors and Affiliations
Additional information
__________
Translated from Fizika Tverdogo Tela, Vol. 45, No. 9, 2003, pp. 1603–1607.
Original Russian Text Copyright © 2003 by Skvortsov, Gonchar, Orlov.
Rights and permissions
About this article
Cite this article
Skvortsov, A.A., Gonchar, L.I. & Orlov, A.M. Electrically stimulated motion of dislocations in a constant magnetic field. Phys. Solid State 45, 1683–1687 (2003). https://doi.org/10.1134/1.1611234
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/1.1611234