Abstract
The diffusion-segregation boron distribution in the silicon dioxide-silicon system upon oxidation in different environments is studied by secondary-ion mass spectrometry and numerical simulation. The coefficient of boron segregation at the SiO2/Si interface and the enhancement of boron diffusion in silicon as functions of the type of oxidizing environment (dry oxygen, wet oxygen, and the presence of hydrochloric acid vapor), the orientation of the silicon surface, and the temperature of oxidizing annealing are obtained. A qualitative model is proposed based on the assumption that the segregation mass transfer of boron through the SiO2/Si interface is associated with the generation of nonequilibrium intrinsic interstitials.
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 73, No. 5, 2003, pp. 57–63.
Original Russian Text Copyright © 2003 by Aleksandrov, Afonin.
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Aleksandrov, O.V., Afonin, N.N. Effect of oxidizing environments on the diffusion-segregation boron distribution in the thermal silicon dioxide-silicon system. Tech. Phys. 48, 580–586 (2003). https://doi.org/10.1134/1.1576471
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DOI: https://doi.org/10.1134/1.1576471