Abstract
Photoluminescence of GaAs/AlGaAs multiple-quantum-well structures incorporating positively charged beryllium-impurity shallow-level acceptors (the so-called A(+) centers) was investigated. A novel luminescence line, which originated from radiative recombination of free electrons with A(+) centers, was observed. It was shown that its spectral position is determined uniquely by the binding energy of A(+) centers. It was also ascertained that the binding energy of A(+) centers increases with a decrease in the quantum-well width when the latter is comparable to the radius of A(+) centers.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 8, 2002, pp. 993–995.
Original Russian Text Copyright © 2002 by Ivanov, Agrinskaya, Petrov, Ustinov, Tsyrlin.
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Ivanov, Y.L., Agrinskaya, N.V., Petrov, P.V. et al. Manifestation of A(+) centers in the luminescence of two-dimensional GaAs/AlGaAs structures. Semiconductors 36, 929–931 (2002). https://doi.org/10.1134/1.1500474
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DOI: https://doi.org/10.1134/1.1500474