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Switching effect in Si-CdS heterojunctions synthesized in highly nonequilibrium conditions

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

The results of the investigation of electrical properties and processes of the formation of heterojunctions on crystalline Si substrate cooled to negative centigrade temperatures is reported. The data of technology, electron diffraction analysis, and electrical investigations are given. The effect of conductivity switching is revealed in heterojunctions based on two-phase CdS films, and conditions for the formation of amorphous CdS films and amorphous CdS films with crystalline inclusions are determined. It is demonstrated that the results are in agreement with the soliton model.

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Authors and Affiliations

  1. St. Petersburg State University of Technology, St. Petersburg, 198013, Russia

    A. P. Belyaev & V. P. Rubets

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  1. A. P. Belyaev
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  2. V. P. Rubets
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 7, 2002, pp. 843–846.

Original Russian Text Copyright © 2002 by Belyaev, Rubets.

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Belyaev, A.P., Rubets, V.P. Switching effect in Si-CdS heterojunctions synthesized in highly nonequilibrium conditions. Semiconductors 36, 789–792 (2002). https://doi.org/10.1134/1.1493750

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  • DOI: https://doi.org/10.1134/1.1493750

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