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Alternating-strain-induced drift of nonequilibrium charge carriers in GaAs photodetectors

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Abstract

The drift of nonequilibrium charge carriers in GaAs was studied. It is demonstrated that the electric and acoustic (ultrasonic) fields significantly influence the transport of charge carriers in photodetectors based on piezoelectric semiconductors with traps.

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Authors and Affiliations

  1. Physical Engineering Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

    B. N. Zaveryukhin, N. N. Zaveryukhina, R. A. Muminov & O. M. Tursunkulov

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  1. B. N. Zaveryukhin
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  2. N. N. Zaveryukhina
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  3. R. A. Muminov
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  4. O. M. Tursunkulov
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Translated from Pis’ma v Zhurnal Tekhnichesko\(j_k \sim 1/\sqrt[4]{\tau }\) Fiziki, Vol. 28, No. 5, 2002, pp. 75–83.

Original Russian Text Copyright © 2002 by Zaveryukhin, Zaveryukhina, Muminov, Tursunkulov.

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Zaveryukhin, B.N., Zaveryukhina, N.N., Muminov, R.A. et al. Alternating-strain-induced drift of nonequilibrium charge carriers in GaAs photodetectors. Tech. Phys. Lett. 28, 207–210 (2002). https://doi.org/10.1134/1.1467277

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  • DOI: https://doi.org/10.1134/1.1467277

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