Abstract
We have studied the effect of microwave radiation (frequency, 2.45 GHz; specific power density, 1.5 W/cm2) on the relaxation of internal mechanical strains in the (i)n-n +-GaAs structures, (ii) Au-Ti-n-n +-GaAs diode structures with Schottky barriers, and (iii) GaAs-based Schottky-barrier field-effect transistors (SFETs). It is shown that exposure of the samples to the microwave radiation for a few seconds leads to relaxation of the internal mechanical strains and improves the quality of the semiconductor surface layer structure. This results in improved parameters of the GaAs-based device structures of both (diode and SFET) types, as manifested by increased Schottky barrier height, reduced ideality factor and back current in the diode structures, and increased gain slope and initial drain current in the SFETs.
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References
D. E. Abdurakhimov, F. Sh. Vakhidov, V. L. Vereshchagin, et al., Mikroélektronika 20(1), 21 (1991).
D. E. Abdurakhimov, V. L. Vereshchagin, V. P. Kalinushkin, et al., Kratk. Soobshch. Fiz., No. 6, 27 (1991).
V. I. Pashkov, V. A. Perevoshchikov, and V. D. Skupov, Pis’ma Zh. Tekh. Fiz. 20(8), 14 (1994) [Tech. Phys. Lett. 20, 310 (1994)].
V. V. Milenin, R. V. Konakova, V. A. Statov, et al., Pis’ma Zh. Tekh. Fiz. 20(4), 32 (1994) [Tech. Phys. Lett. 20, 147 (1994)].
S. B. Bludov, N. P. Gadetskii, K. A. Kravtsov, et al., Fiz. Plazmy 20(8), 712 (1994) [Plasma Phys. Rep. 20, 643 (1994)].
A. A. Belyaev, A. E. Belyaev, I. B. Ermolovich, et al., Zh. Tekh. Fiz. 68(12), 49 (1998) [Tech. Phys. 43, 1445 (1998)].
V. I. Chumakov, Radiotekhnika 106, 120 (1998).
T. A. Briantseva, Z. M. Lebedeva, I. A. Markov, et al., Appl. Surf. Sci. 272, 288 (1999).
H. Zohm, E. Kasper, P. Mehringer, and G. A. Muller, Microelectron. Eng. 54, 247 (2000).
A. E. Kadukov and A. V. Razumov, Peterb. Zh. Élektron., No. 2, 53 (2000).
Structural Relaxation in Semiconductor Crystals and Device Structures, Ed. by Yu. A. Tkhorik (Feniks, Kiev, 1994).
E. F. Venger, R. V. Konakova, V. V. Milenin, et al., Vopr. At. Nauki Tekh., Ser. Fiz. Radiats. Povrezhdenii Radiats. Materialoved. 3(75), 60 (1999).
O. Yu. Borkovskaya, S. A. Grusha, N. L. Dmitruk, et al., Zh. Tekh. Fiz. 55(10), 1977 (1985) [Sov. Phys. Tech. Phys. 30, 1161 (1985)].
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 4, 2002, pp. 57–64.
Original Russian Text Copyright © 2002 by Boltovets, Kamalov, Kolyadina, Konakova, P. Lytvyn, O. Lytvyn, Matveeva, Milenin, Rengevych.
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Boltovets, N.S., Kamalov, A.B., Kolyadina, E.Y. et al. Microwave-stimulated relaxation of internal strains in GaAs-based device heterostructures. Tech. Phys. Lett. 28, 154–156 (2002). https://doi.org/10.1134/1.1458520
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DOI: https://doi.org/10.1134/1.1458520