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A combined technique for studying the multicomponent spectra of photoreflection from semiconductors

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

A new technique for studying the multicomponent photoreflection spectra in semiconductors involves spectra measurements at different laser fluences and wavelengths in combination with spectrum phase analysis. To demonstrate the possibilities offered by the technique, the multicomponent photoreflection spectrum of the passivated homoepitaxial Si3N4/n-GaAs/n +-GaAs wafer is analyzed.

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Authors and Affiliations

  1. Voronezh State University, Universitetskaya pl. 1, Voronezh, 394893, Russia

    R. V. Kuz’menko, A. V. Ganzha & É. P. Domashevskaya

Authors
  1. R. V. Kuz’menko
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  2. A. V. Ganzha
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  3. É. P. Domashevskaya
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 1, 2002, pp. 52–58.

Original Russian Text Copyright © 2002 by Kuz’menko, Ganzha, Domashevskaya.

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Kuz’menko, R.V., Ganzha, A.V. & Domashevskaya, É.P. A combined technique for studying the multicomponent spectra of photoreflection from semiconductors. Semiconductors 36, 48–53 (2002). https://doi.org/10.1134/1.1434513

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  • DOI: https://doi.org/10.1134/1.1434513

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