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Preparation and properties of isotopically pure polycrystalline silicon

  • Electronic and Optical Properties of Semiconductors
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Abstract

A method for extracting silicon isotopes was developed. Polycrystalline 28Si, 29Si, and 30Si samples isotopically enriched to 99.95, 99.5, and 99.9%, respectively, were prepared. Energies of optical phonons in the isotopically pure samples show the expected dependence on the average atomic mass.

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Authors and Affiliations

  1. Electromechanical Plant, St. Petersburg, 198096, Russia

    O. N. Godisov & A. K. Kaliteevskii

  2. Khlopin Radium Institute, St. Petersburg, 194021, Russia

    V. I. Korolev

  3. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    B. Ya. Ber, V. Yu. Davydov, M. A. Kaliteevskii & P. S. Kop’ev

Authors
  1. O. N. Godisov
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  2. A. K. Kaliteevskii
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  3. V. I. Korolev
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  4. B. Ya. Ber
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  5. V. Yu. Davydov
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  6. M. A. Kaliteevskii
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  7. P. S. Kop’ev
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 8, 2001, pp. 913–916.

Original Russian Text Copyright © 2001 by Godisov, A. Kaliteevski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Korolev, Ber, Davydov, M. Kaliteevski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Kop’ev.

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Godisov, O.N., Kaliteevskii, A.K., Korolev, V.I. et al. Preparation and properties of isotopically pure polycrystalline silicon. Semiconductors 35, 877–879 (2001). https://doi.org/10.1134/1.1393019

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  • DOI: https://doi.org/10.1134/1.1393019

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