Abstract
Luminescence spectra and quantum yield in light emitting diodes (LEDs) based on InGaN/AlGaN/GaN heterostructures with multiple quantum wells (MQWs) were studied in the range of currents J=10−6–10−1 A. Minor spread in the quantum yield at operating currents (±15% at J≈10 mA) was observed in these LEDs, which were fabricated by Hewlett-Packard. The spread is due to differences in the current and voltage dependences of the diode emission intensity, caused by differences in the charged center distribution across the space-charge region (SCR) of the structures and in the role of the tunnel current component at low voltages. In the diodes with a thin (≲120 nm) SCR, a tunnel emission band was observed for J≲100 µA; the peak energy of this band ℏωmax=1.92–2.05 eV corresponds to the voltage applied. At low currents (J=0.05–0.5 mA), the spectral position of the main peak ℏωmax=2.35–2.36 eV is independent of the voltage and is determined by the radiative transitions between the localized states. At J>1 mA, this band shifts with the current (ℏωmax=2.36–2.52 eV). Its shape corresponds to the model for the occupation of states in the two-dimensional energy band tails, which are caused by the microscopic potential fluctuations. The four parameters in this model are related to the calculated energy band diagram of the MQW structure.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 7, 2001, pp. 861–868.
Original Russian Text Copyright © 2001 by Kudryashov, Mamakin, Turkin, Yunovich, Kovalev, Manyakhin.
Part of this study was reported at the 3rd All-Russia Workshop on Structures and Devices Based on Gallium, Indium, and Aluminum Nitrides (Moscow State University, 1999); the 3rd International Conference on Nitride Semiconductors (Montpellier, 1999); and the 4th European Gallium Nitride Workshop (Nottingham, 2000).
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Kudryashov, V.E., Mamakin, S.S., Turkin, A.N. et al. Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: Current and voltage dependence. Semiconductors 35, 827–834 (2001). https://doi.org/10.1134/1.1385720
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DOI: https://doi.org/10.1134/1.1385720