Abstract
Special features of gadolinium solubility during the Hg3In2Te6:Gd crystal growth are considered. The highest attainable gadolinium concentration in the solid phase is equal to 2.3×1019 cm−3. It is shown that, as the doping level increases, strains and stresses in the crystal lattice occur and correlate with the dopant concentration. Doping has virtually no effect on the transport properties and the Fermi level located near the middle of the energy gap. The optical absorption observed at photon energies lower than the energy gap is accounted for by the tails of the density of states in the band gap. Absorption-spectra features are explained using the theory of the interaction of light with disordered, heavily compensated semiconductors. Additional structureless absorption in the optical transparency region is caused by the small-angle scattering of light by inclusions formed by the charged impurities.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 10, 2000, pp. 1197–1200.
Original Russian Text Copyright © 2000 by O. Grushka, Gorle\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Bestsenny\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Z. Grushka.
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Grushka, O.G., Gorlei, P.M., Bestsennyi, A.V. et al. Effect of doping with gadolinium on the physical properties of Hg3In2Te6 . Semiconductors 34, 1147–1150 (2000). https://doi.org/10.1134/1.1317573
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DOI: https://doi.org/10.1134/1.1317573