Abstract
Electrostatics is used to model the narrowing of the energy gap ɛ 2 between Hubbard bands (the A 0-and A +-bands) in a p-doped semiconductor with increasing acceptor concentration N + N 0 + N -1 + N +1 and with increasing degree of compensation K by donors for N −1≈KN. The screening of impurity ions by holes hopping from acceptor to acceptor is taken into account. It is shown that this effect leads to a shift of the A 0-band towards the valence band and the A +-band towards the conduction band. The concentration of holes hopping in the A +-band N +1 N 0/N is determined by the energy of their thermal generation ɛ 2 from the A 0-band. The values of ɛ 2 calculated for Si: B are in agreement with experimental data.
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Fiz. Tekh. Poluprovodn. 33, 402–404 (April 1999)
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Poklonskii, N.A., Syaglo, A.I. Electrostatic model of the energy gap between Hubbard bands for boron atoms in silicon. Semiconductors 33, 391–393 (1999). https://doi.org/10.1134/1.1187700
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DOI: https://doi.org/10.1134/1.1187700