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Changes in the luminescent and electrical properties of InGaN/AlGaN/GaN light-emitting diodes during extended operation

  • Physics of Semiconductor Devices
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Abstract

Changes in the luminescence spectra and current-voltage and capacitance-voltage characteristics of light-emitting diodes based on InGaN/AlGaN/GaN heterostructures were investigated as functions of operating time during extended use. Sample blue and green light-emitting diodes with InGaN single quantum-well active layers were examined during operating times of 102−2×103 h at currents up to 80 mA. An increase in the efficiency at the working currents (15 mA) was observed in the first stage of aging (100–800 h) followed by a decrease in the second stage. The greatest changes in the spectra were observed at low currents (<0.15 mA). Studies of the distribution of charged acceptors in the space-charge region showed that their concentration grows in the first stage and falls in the second. Models explaining the two stages of aging are proposed: 1) activation of Mg acceptors as a result of destruction of residual Mg-H complexes, and 2) formation of N donor vacancies. A model of subthreshold defect formation by hot electrons injected into the quantum wells is discussed.

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References

  1. A. N. Kovalev, V. E. Kudryashov, F. I. Manyakhin, A. N. Turkin, and A. E. Yunovich, in Proceedings of the Second International Conference on Nitride Semiconductors (Tokushima, Japan, 1997), Paper P1-6, p. 46.

    Google Scholar 

  2. A. N. Kovalev, V. E. Kudryashov, F. I. Manyakhin, A. N. Turkin, and A. E. Yunovich, Abstracts of the 1997 Fall Meeting of the Materials Research Society (Boston, USA, 1997), Abstract D17.3, p. 130.

  3. A. É. Yunovich, Svetotekhnika, No. 6, 2 (1996).

  4. F. A. Ponce and D. P. Bour, Nature (London) 386, 351 (1997).

    Article  Google Scholar 

  5. M. Osinski, P. Perlin, P. G. Eliseev, G. Liu, and D. Burton, MRS Symp. Proc. 449, 179 (1997).

    Google Scholar 

  6. T. Egawa, H. Ishikava, T. Jimbo, and M. Umeno, MRS Symp. Proc. 449, 1191 (1997).

    Google Scholar 

  7. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, Jpn. J. Appl. Phys. 34, Pt. 2, No. 10b, L1332 (1995).

    Google Scholar 

  8. K. G. Zolina, V. E. Kudryashov, A. N. Turkin, A. É. Yunovich, and S. Nakamura, MRS Int’l. J. Nitride Semicond. Res., 1/11 (1996).

  9. K. G. Zolina, V. E. Kudryashov, A. N. Turkin, and A. É. Yunovich, Fiz. Tekh. Poluprovodn. 31, 1055 (1997) [Semiconductors 31, 850 (1997)].

    Google Scholar 

  10. A. E. Yunovich, A. N. Kovalev, V. E. Kudryashov, F. I. Manyakhin, A. N. Turkin, and K. G. Zolina, MRS Symp. Proc. 449, 1167 (1997).

    Google Scholar 

  11. V. E. Kudryashov, K. G. Zolina, A. N. Kovalev, F. I. Manyakhin, A. N. Turkin, and A. É. Yunovich, Fiz. Tekh. Poluprovodn. 31, 1304 (1997) [Semiconductors 31, 1265 (1997)].

    Google Scholar 

  12. F. I. Manyakhin, A. N. Kovalev, V. E. Kudryashov, A. N. Turkin, and A. E. Yunovich, MRS Int’l. J. Nitride Semicond. Res., 2/11 (1997).

    Google Scholar 

  13. N. N. Goryunov, F. I. Manyakhin, and R. Yu. Osipov, Inform. Technol. Proekt., No. 2, 51 (1997).

  14. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys. 28, L2112 (1989).

    Article  Google Scholar 

  15. S. Nakamura, T. Mukai, and M. Senoch, J. Appl. Phys. 76, 8189 (1994).

    ADS  Google Scholar 

  16. C. B. Vartuli, S. J. Pearton, C. R. Abernathy et al., J. Vac. Sci. Technol. B 14, 2523 (1996).

    Google Scholar 

  17. J. Leitner, J. Steikal, and P. Vonka, Mater. Lett. 28, 197 (1996).

    Article  Google Scholar 

  18. F. I. Manyakhin, Izv. VUZov, Ser. Mater. Élektron. Tekhn., No. 1, 63 (1997).

  19. C. G. Van De Walle, C. Stampfl, and J. Neugebauer, in Proceedings of the Second International Conference on Nitride Semiconductors (Tokushima, Japan, 1997), Paper W1-1, p. 386.

    Google Scholar 

  20. V. S. Vavilov, A. E. Kiv, and O. R. Niyazova, Mechanisms of Defect Formation and Migration in Semiconductors (Nauka, Moscow, 1981).

    Google Scholar 

  21. V. S. Vavilov, Usp. Fiz. Nauk 167,4, 407 (1997).

    Google Scholar 

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Authors and Affiliations

  1. Moscow Institute of Steel and Alloys, 117936, Moscow, Russia

    A. N. Kovalev & F. I. Manyakhin

  2. M. V. Lomonosov Moscow State University, 119899, Moscow, Russia

    V. E. Kudryashov, A. N. Turkin & A. É. Yunovich

Authors
  1. A. N. Kovalev
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  2. F. I. Manyakhin
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  3. V. E. Kudryashov
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  4. A. N. Turkin
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  5. A. É. Yunovich
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Fiz. Tekh. Poluprovodn. 33, 224–232 (February 1999)

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Kovalev, A.N., Manyakhin, F.I., Kudryashov, V.E. et al. Changes in the luminescent and electrical properties of InGaN/AlGaN/GaN light-emitting diodes during extended operation. Semiconductors 33, 192–199 (1999). https://doi.org/10.1134/1.1187669

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  • DOI: https://doi.org/10.1134/1.1187669

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