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Long-term structural relaxation and photoinduced degradation in a-Si: H

  • Amorphous, Glassy, and Porous Semiconductors
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Abstract

The effect of heating-illumination cycling on the electrical properties of a-Si: H fabricated in a glow discharge was investigated. Comparison of experimental and theoretical results shows that photostimulated degradation of a-Si: H (the Staebler-Wronski effect) may occur due to long-term degradation of structural defects generated by preliminary heating.

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Authors and Affiliations

  1. Pediatric Medical Academy, 194100, St. Petersburg, Russia

    K. V. Kougia

  2. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. B. Pevtsov

Authors
  1. K. V. Kougia
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  2. A. B. Pevtsov
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Additional information

Fiz. Tekh. Poluprovodn. 32, 1272–1276 (October 1998)

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Kougia, K.V., Pevtsov, A.B. Long-term structural relaxation and photoinduced degradation in a-Si: H. Semiconductors 32, 1128–1130 (1998). https://doi.org/10.1134/1.1187543

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  • DOI: https://doi.org/10.1134/1.1187543

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