Abstract
The electrical properties of GaSb and solid solutions based on it (GaInAsSb, GaAlSb, GaAlAsSb) have been investigated. It is shown that the current-carrier concentration and mobility in all these materials are determined mainly by V GaGaSb structural defects, with their concentration decreasing almost linearly with decrease of the GaSb content of the solid solution. The dependence of the parameters of the solid solutions on the concentration of these structural defects is determined. The possibility of reducing their concentration by using the neutral solvent Pb and rare-earth elements is demonstrated.
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Fiz. Tekh. Poluprovodn. 32, 278–284 (March 1998)
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Voronina, T.I., Dzhurtanov, B.E., Lagunova, T.S. et al. Electrical properties of GaSb-based solid solutions (GaInAsSb, GaAlSb, GaAlAsSb) and their compositional dependence. Semiconductors 32, 250–256 (1998). https://doi.org/10.1134/1.1187389
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DOI: https://doi.org/10.1134/1.1187389