Abstract
Transformation of radiation-induced defects in p +-n-n + structures fabricated from highresistivity n-type silicon subjected to cyclic irradiation and annealing is investigated. The kinetic behavior of the increase in the concentration of the Ci-Oi defects is analyzed as a function of the detector fabrication process. During the second irradiation cycle a transformation of the defects, which were formed as a result of annealing of the original radiation defects, is observed. The appearance of “hidden” sources of deep center formation is revealed. It is established that the presence of a higher oxygen concentration, which arises in the samples as a result of the extended silicon oxidation process, results in a more active complex-formation of carbon-containing defects in comparison with samples with reduced oxygen content.
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References
Z. Li, IEEE Trans. Nucl. Sci. NS-42, 224 (1995).
E. Fretwurst, H. Feick, M. Glaser, C. Gobling, E. H. M. Heijline, A. Rolf, T. Schulz, and C. Soave, Nucl. Instrum. Methods A 342, 119 (1994).
Z. Li, W. Chen, L. Dou, V. Eremin, H. W. Kraner, C. J. Li, G. Lindstroem, and E. Spiriti, IEEE Trans. Nucl. Sci. NS-42, 219 (1995).
M. T. Asom, J. L. Benson, R. Sauer, and L. C. Kimberling, Appl. Phys. Lett. 51, 256 (1987).
L. W. Song, X. D. Zhan, B. W. BEnson, and G. D. Watkins, Phys. Rev. B 42, 5765 (1990).
E. M. Verbitskaya, V. K. Eremin, A. M. Ivanov, N. B. Strokan, Z. Li, and B. Schmidt, Fiz. Tekh. Poluprovodn. 27, 2068 (1993) [Semiconductors 27, (1993)].
B. Schmidt, V. Eremin, A. Ivanov, N. Strokan, E. Verbitskaya, and Z. Li, J. Appl. Phys. 76, 4072 (1994).
S. D. Brotherton and P. Bradley, J. Appl. Phys. 53, 5720 (1982).
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Fiz. Tekh. Poluprovodn. 31, 299–304 (February 1997)
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Verbitskaya, E.M., Eremin, V.K., Ivanov, A.M. et al. Formation of radiation defects in high-resistivity silicon as a result of cyclic irradiation and annealing. Semiconductors 31, 189–193 (1997). https://doi.org/10.1134/1.1187105
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DOI: https://doi.org/10.1134/1.1187105