Abstract
The overheating temperature of a microvolume of silicon dioxide produced by bombardment by a high specific-power electron beam has been estimated. Calculations showed that the maximum temperature to which a microvolume of silicon dioxide is overheated can be as high as 1200°C for an electron beam current of 100 nA. The variation in the cathodoluminescence characteristics of amorphous silica with different contents of hydroxyl groups was studied for various electron beam specific-power levels. The impact of a high specific-power electron beam was shown to create additional lattice defects up to the formation of silicon clusters.
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Translated from Fizika Tverdogo Tela, Vol. 46, No. 6, 2004, pp. 989–994.
Original Russian Text Copyright © 2004 by Bakale\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)nikov, Zamoryanskaya, Kolesnikova, Sokolov, Flegontova.
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Bakaleinikov, L.A., Zamoryanskaya, M.V., Kolesnikova, E.V. et al. Silicon dioxide modification by an electron beam. Phys. Solid State 46, 1018–1023 (2004). https://doi.org/10.1134/1.1767236
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DOI: https://doi.org/10.1134/1.1767236