Abstract
In this work we present the results of studying the influence of the local anodic oxidation (LAO) technological modes on the process of formation of oxide nanodimensional structures (ONSs) at the surface of Gallium Arsenide epitaxial structures (ESs). We have studied the influence of the amplitude and duration of pulses of voltage applied to the system probe-substrate and amplitude of cantilever vibrations on the geometric parameters of GaAs ONS. The influence of LAO modes on the geometric parameters of profiled nanodimensional structures (PNSs) obtained at the surface of GaAs ES after etching the ONS formed by LAO has been studied. It is established that an increase in the amplitude and duration of pulses of the applied voltage by LAO results in an increase in the height, depth, and diameter of oxide and profiled nanodimensional structures at the surface of GaAs ES. It is shown that an increase in the amplitude of the cantilever vibrations from 3 to 26 nm results in a decrease in the PNS from 9.1 ± 1.6 to 3.4 ± 0.3 nm and diameter of PNS from 274 ± 34 to 167 ± 29 nm. The results may be used for developing the technological processes for preparing an element base for nanoelectronics based on Gallium Arsenide.
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Avilov, V.I., Ageev, O.A., Smirnov, V.A. et al. Studying the modes of nanodimensional surface profiling of Gallium Arsenide epitaxial structures by local anodic oxidation. Nanotechnol Russia 10, 214–219 (2015). https://doi.org/10.1134/S1995078015020032
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DOI: https://doi.org/10.1134/S1995078015020032