Abstract
Crystals of a new radical-cation salt (DOEO)4[HgBr4] · TCE (I) (DOEO = (1,4-dioxanediyl-2,3-dithio)ethylenedioxotetrathiafulvalene, TCE = 1,1,2-trichloroethane) were synthesized by electrocrystallization method at constant current (i=5×10−6 A/cm2). Crystal structure was studied at room (293 K) and low (30 K) temperatures and was found to consist of the radical-cation layers alternating along the z-axis with tetrahedral HgBr 2−4 anions and TCE molecules. The anion is disordered over three positions at room and over two positions at low temperatures with occupancy factors 87, 11, 2 and 98, 2%, respectively. The poorly occupied positions of the anion are overlapped with positions of the TCE molecule disordered over two equally occupied positions. The DOEO ethylene groups disordered at 293 K were found ordered at 30 K. The conductivity of I exhibits the following peculiarity: in a temperature interval of 120–140 K, the temperature dependence of resistivity has a pronounced maximum.
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Original Russian Text © A.A. Bardin, A.I. Kotov, S.S. Khasanov, G.V. Shilov, L.I. Buravov, L. Ochab, E.B. Yagubskii, 2006, published in Koordinatsionnaya Khimiya, 2006, Vol. 32, No. 2, pp. 88–100.
An erratum to this article is available at http://dx.doi.org/10.1134/S1070328406120104.
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Bardin, A.A., Kotov, A.I., Khasanov, S.S. et al. The radical-cation salt (DOEO)4[HgBr4] · TCE: Synthesis, structure and conductivity. Russ J Coord Chem 32, 82–93 (2006). https://doi.org/10.1134/S1070328406020023
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DOI: https://doi.org/10.1134/S1070328406020023