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The influence of an In0.52Al0.48As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor

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Abstract

We have used the atomic force microscopy and Hall effect measurements to study the influence of In0.52Al0.48As transition layer design on the electron mobility in the InAlAs/InGaAs/GaAs channel of a highelectron- mobility transistor (HEMT) with the metamorphic buffer. The optimum buffer layer favors suppression of the misfit dislocation threading into upper layers of the HEMT heterostructure and prevents development of the surface microrelief.

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Authors and Affiliations

  1. St. Petersburg Academic University, Nanotechnology Research and Education Center, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. A. Lazarenko, E. V. Nikitina, E. V. Pirogov & M. S. Sobolev

  2. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. Yu. Egorov

  3. St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO University), St. Petersburg, 197101, Russia

    A. Yu. Egorov

Authors
  1. A. A. Lazarenko
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  2. E. V. Nikitina
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  3. E. V. Pirogov
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  4. M. S. Sobolev
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  5. A. Yu. Egorov
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Corresponding author

Correspondence to A. A. Lazarenko.

Additional information

Original Russian Text © A.A. Lazarenko, E.V. Nikitina, E.V. Pirogov, M.S. Sobolev, A.Yu. Egorov, 2016, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 42, No. 6, pp. 14–19.

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Lazarenko, A.A., Nikitina, E.V., Pirogov, E.V. et al. The influence of an In0.52Al0.48As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor. Tech. Phys. Lett. 42, 284–286 (2016). https://doi.org/10.1134/S1063785016030238

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  • DOI: https://doi.org/10.1134/S1063785016030238

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