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Nanoindentation and deformation properties of nanoscale silicon carbide films on silicon substrate

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Abstract

We propose a model to describe the microhardness of a nanoscale film-substrate system as a function of the depth of indenter penetration. The proposed model has been used to study the deformation characteristics of a nanometer-thick silicon carbide (SiC) grown on a silicon substrate by the method of atomic substitution. The microhardness of as-grown SiC film and a modified silicon layer has been determined. The SiC film thickness has been determined using the nanoindentation technique. The data of nanoindentation are in good agreement with the results of ellipsometric measurements.

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Authors and Affiliations

  1. Institute for Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg, 199178, Russia

    A. S. Grashchenko, S. A. Kukushkin & A. V. Osipov

  2. St. Petersburg State Polytechnical University, St. Petersburg, 195251, Russia

    S. A. Kukushkin

Authors
  1. A. S. Grashchenko
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  2. S. A. Kukushkin
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  3. A. V. Osipov
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Corresponding author

Correspondence to S. A. Kukushkin.

Additional information

Original Russian Text © A.S. Grashchenko, S.A. Kukushkin, A.V. Osipov, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 24, pp. 53–59.

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Grashchenko, A.S., Kukushkin, S.A. & Osipov, A.V. Nanoindentation and deformation properties of nanoscale silicon carbide films on silicon substrate. Tech. Phys. Lett. 40, 1114–1116 (2014). https://doi.org/10.1134/S1063785014120268

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  • DOI: https://doi.org/10.1134/S1063785014120268

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