Abstract
Specific features of how nonalloyed ohmic contacts to the 2D conducting channel of high-electron-mobility transistors based on AlGaN/(AlN)/GaN heterostructures are fabricated via deposition of heavily doped n +-GaN through a SiO2 mask by ammonia molecular-beam epitaxy have been studied. The technique developed makes it possible to obtain specific resistances of contacts to the 2D gas as low as 0.11 Ω mm on various types of Ga-face nitride heterostructures, which are several times lower than the resistance of conventional alloyed ohmic contacts.
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Original Russian Text © I.O. Maiboroda, A.A. Andreev, P.A. Perminov, Yu.V. Fedorov, M.L. Zanaveskin, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 11, pp. 80–86.
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Maiboroda, I.O., Andreev, A.A., Perminov, P.A. et al. Selective MBE growth of nonalloyed ohmic contacts to 2D electron gas in high-electron-mobility transistors based on GaN/AlGaN heterojunctions. Tech. Phys. Lett. 40, 488–490 (2014). https://doi.org/10.1134/S1063785014060091
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DOI: https://doi.org/10.1134/S1063785014060091