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Depth profiling of fullerene-containing structures by time-of-flight secondary ion mass spectrometry

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Abstract

A new variant of depth profiling for thin-film fullerene-containing organic structures by the method of time-of-flight (TOF) secondary ion mass spectrometry (SIMS) on a TOF.SIMS-5 setup is described. The dependence of the yield of C60 molecular ions on the energy of sputtering ions has been revealed and studied. At an energy of sputtering Cs+ ions below 1 keV, the intensity of C60 molecular ions is sufficiently high to make possible both elemental and molecular depth profiling of multicomponent (multilayer) thin-film structures. Promising applications of TOF-SIMS depth profiling for obtaining more detailed information on the real molecular composition of functional organic materials are shown.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    M. N. Drozdov, Yu. N. Drozdov, G. L. Pakhomov, V. V. Travkin, P. A. Yunin & V. F. Razumov

  2. Institute for Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia

    M. N. Drozdov, Yu. N. Drozdov, G. L. Pakhomov, V. V. Travkin, P. A. Yunin & V. F. Razumov

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  1. M. N. Drozdov
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  2. Yu. N. Drozdov
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  3. G. L. Pakhomov
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  4. V. V. Travkin
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  5. P. A. Yunin
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  6. V. F. Razumov
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Correspondence to M. N. Drozdov.

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Original Russian Text © M.N. Drozdov, Yu.N. Drozdov, G.L. Pakhomov, V.V. Travkin, P.A. Yunin, V.F. Razumov, 2013, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 39, No. 24, pp. 45–54.

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Drozdov, M.N., Drozdov, Y.N., Pakhomov, G.L. et al. Depth profiling of fullerene-containing structures by time-of-flight secondary ion mass spectrometry. Tech. Phys. Lett. 39, 1097–1100 (2013). https://doi.org/10.1134/S1063785013120183

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  • DOI: https://doi.org/10.1134/S1063785013120183

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