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Obtaining nanodimensional layers of GaAsP solid solutions on GaAs by solid-state substitution reactions

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Abstract

A new method based on solid-state substitution reactions is proposed for obtaining nanodimensional layers of GaAsP solid solutions on the surface of GaAs semiconductor crystals. The processed GaAs wafers exhibit a wide-bandgap optical window effect, whereby their room-temperature photoluminescence intensity increases by a factor of up to 25.

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References

  1. A. B. Krysa, J. S. Roberts, D. G. Revin, K. Kennedy, L. R. Wilson, and J. W. Cocburn, Proceedings of Symp. “Semiconductor Lasers: Physics and Technology” (November 5–7, St. Petersburg, 2008), p. 15 [in Russian].

  2. V. M. Andreev, V. P. Khvostikov, V. R. Larionov, V. D. Rumyantsev, E. V. Paleeva, and M. Z. Shvarts, Semiconductors 33, 976 (1999).

    Article  ADS  Google Scholar 

  3. V. M. Andreev, A. A. Vodnev, V. R. Larionov, T. P. Prutskikh, V. D. Rumyantsev, K. Ya. Rasulov, and V. P. Khvostikov, Sov. Phys. Semicond. 23, 374 (1989).

    Google Scholar 

  4. V. I. Vasil’ev, I. P. Nikitina, V. M. Smirnov, and D. N. Tretyakov, Mater. Sci. Eng. 66, 67 (1999).

    Article  Google Scholar 

  5. T. Sugino, S. Nozu, and S. Nakajima, Appl. Phys. Lett. 74, 2999 (1999).

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Ioffe Physical Technical Institute of the Russian Academy of Sciences, St. Petersburg, 194021, Russia

    V. I. Vasil’ev, G. S. Gagis, V. I. Kuchinskii, V. P. Khvostikov & E. P. Marukhina

Authors
  1. V. I. Vasil’ev
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  2. G. S. Gagis
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  3. V. I. Kuchinskii
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  4. V. P. Khvostikov
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  5. E. P. Marukhina
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Corresponding author

Correspondence to G. S. Gagis.

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Original Russian Text © V.I. Vasil’ev, G.S. Gagis, V.I. Kuchinskii, V.P. Khvostikov, E.P. Marukhina, 2013, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2013, Vol. 39, No. 10, pp. 49–53.

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Vasil’ev, V.I., Gagis, G.S., Kuchinskii, V.I. et al. Obtaining nanodimensional layers of GaAsP solid solutions on GaAs by solid-state substitution reactions. Tech. Phys. Lett. 39, 472–474 (2013). https://doi.org/10.1134/S106378501305026X

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  • DOI: https://doi.org/10.1134/S106378501305026X

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