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Temperature-dependent integral exciton absorption in semiconducting InP crystals

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Abstract

The temperature dependence of the fundamental absorption edge in free-standing “epitaxial” InP layers has been experimentally studied. The integral exciton absorption coefficient K(T) exhibits an increase at low temperatures, which is explained in terms of the exciton-polariton mechanism of light transfer in semi-conductor crystals with spatial dispersion. A critical temperature (T c = 200 K), above which the integral absorption becomes constant, has been experimentally determined, and the corresponding critical decay parameter (Γc = 0.341 meV), longitudinal-transverse splitting (ħωLT = 0.175 meV), and oscillator strength of the exciton transition (β = 0.237 × 10−4) have been calculated. The temperature dependence of the true dissipative decay has been determined.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    S. A. Vaganov & R. P. Seisyan

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  1. S. A. Vaganov
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  2. R. P. Seisyan
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Correspondence to S. A. Vaganov.

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Original Russian Text © S.A. Vaganov, R.P. Seisyan, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 3, pp. 39–46.

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Vaganov, S.A., Seisyan, R.P. Temperature-dependent integral exciton absorption in semiconducting InP crystals. Tech. Phys. Lett. 38, 121–124 (2012). https://doi.org/10.1134/S1063785012020174

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