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MBE-grown InSb photodetector arrays

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Abstract

The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia

    A. K. Bakarov, A. K. Gutakovskii, K. S. Zhuravlev, A. P. Kovchavtsev & A. I. Toropov

  2. Novosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russia

    A. K. Bakarov & K. S. Zhuravlev

  3. AO NPO Orion, ul. Kosinskaya 9, Moscow, 119991, Russia

    I. D. Burlakov, K. O. Boltar’, P. V. Vlasov & A. A. Lopukhin

Authors
  1. A. K. Bakarov
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  2. A. K. Gutakovskii
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  3. K. S. Zhuravlev
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  4. A. P. Kovchavtsev
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  5. A. I. Toropov
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  6. I. D. Burlakov
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  7. K. O. Boltar’
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  8. P. V. Vlasov
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  9. A. A. Lopukhin
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Corresponding author

Correspondence to A. K. Bakarov.

Additional information

Original Russian Text © A.K. Bakarov, A.K. Gutakovskii, K.S. Zhuravlev, A.P. Kovchavtsev, A.I. Toropov, I.D. Burlakov, K.O. Boltar’, P.V. Vlasov, A.A. Lopukhin, 2017, published in Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 87, No. 6, pp. 900–904.

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Bakarov, A.K., Gutakovskii, A.K., Zhuravlev, K.S. et al. MBE-grown InSb photodetector arrays. Tech. Phys. 62, 915–919 (2017). https://doi.org/10.1134/S1063784217060044

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  • DOI: https://doi.org/10.1134/S1063784217060044

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