Abstract
The effect of changing the misfit dislocation propagation direction during GaN layer growth on the AlN/SiC/Si(111) structure surface is detected. The effect is as follows. As the GaN layer growing on AlN/SiC/Si(111) reaches a certain thickness of ~300 nm, misfit dislocations initially along the layer growth axis stop and begin to move in the direction perpendicular to the growth axis. A theoretical model of AlN and GaN nucleation on the (111) SiC/Si face, explaining the effect of changing the misfit dislocation motion direction, is constructed. The effect of changing the nucleation mechanism from the island one for AlN on SiC/Si(111) to the layer one for the GaN layer on AlN/SiC/Si is experimentally detected and theoretically explained.
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Original Russian Text © S.A. Kukushkin, A.V. Osipov, V.N. Bessolov, E.V. Konenkova, V.N. Panteleev, 2017, published in Fizika Tverdogo Tela, 2017, Vol. 59, No. 4, pp. 660–667.
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Kukushkin, S.A., Osipov, A.V., Bessolov, V.N. et al. Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates. Phys. Solid State 59, 674–681 (2017). https://doi.org/10.1134/S1063783417040114
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DOI: https://doi.org/10.1134/S1063783417040114