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Domain structure of GaN/SiC-based materials for semiconductor lasers

  • Proceedings of the Third All-Russian Symposium “Semiconductor Lasers: Physics and Technology”
  • St. Petersburg, Russia, November 13–16, 2012
  • Published:
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Abstract

The domain structure of GaN/SiC hexagonal semiconductor films has been studied using small-angle X-ray scattering in order to determine possible domain configurations in a GaN/SiC film that can influence the properties of the laser on its basis. Data on specific features of the samples, such as geometrical properties of clusters and the distances in superstructures (layers, superlattices), respectively, have been obtained by the processing of the small-angle X-ray scattering spectra according to Porod’s and Bragg’s models. A model of regular network of domain walls in GaN/SiC film has been proposed. The hypothesis on the formation of filamentary structures near the film-substrate interface has been confirmed.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    M. E. Boiko, M. D. Sharkov, A. M. Boiko, S. I. Nesterov & S. G. Konnikov

Authors
  1. M. E. Boiko
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  2. M. D. Sharkov
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  3. A. M. Boiko
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  4. S. I. Nesterov
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  5. S. G. Konnikov
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Corresponding author

Correspondence to M. E. Boiko.

Additional information

Original Russian Text © M.E. Boiko, M.D. Sharkov, A.M. Boiko, S.I. Nesterov, S.G. Konnikov, 2013, published in Fizika Tverdogo Tela, 2013, Vol. 55, No. 10, pp. 2036–2039.

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Boiko, M.E., Sharkov, M.D., Boiko, A.M. et al. Domain structure of GaN/SiC-based materials for semiconductor lasers. Phys. Solid State 55, 2150–2153 (2013). https://doi.org/10.1134/S1063783413100053

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  • DOI: https://doi.org/10.1134/S1063783413100053

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