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Identification of nitrogen vacancies in an AlN single crystal: EPR and thermoluminescence investigations

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Abstract

The electronic structure of nitrogen vacancies in specially undoped aluminum nitride single crystals has been determined and the depth of the donor level of these vacancies in the band gap has been found to be ∼75 meV by combined electron paramagnetic resonance and thermoluminescence investigations.

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Correspondence to I. V. Ilyin.

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Original Russian Text © V.A. Soltamov, I.V. Ilyin, A.A. Soltamova, D.O. Tolmachev, E.N. Mokhov, P.G. Baranov, 2011, published in Fizika Tverdogo Tela, 2011, Vol. 53, No. 6, pp. 1121–1125.

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Soltamov, V.A., Ilyin, I.V., Soltamova, A.A. et al. Identification of nitrogen vacancies in an AlN single crystal: EPR and thermoluminescence investigations. Phys. Solid State 53, 1186–1190 (2011). https://doi.org/10.1134/S1063783411060333

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  • DOI: https://doi.org/10.1134/S1063783411060333

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