Abstract
The electronic structure of nitrogen vacancies in specially undoped aluminum nitride single crystals has been determined and the depth of the donor level of these vacancies in the band gap has been found to be ∼75 meV by combined electron paramagnetic resonance and thermoluminescence investigations.
Similar content being viewed by others
References
Y. Taniyasu, M. Kasu, and T. Makimoto, Nature (London) 441, 325 (2006).
B. Monemar, P. P. Paskov, J. P. Bergman, A. A. Toropov, and T. V. Shubina, Phys. Status Solidi B 244, 1759 (2007).
Properties of Group III Nitrides, Ed. by J. H. Edgar (The Institution of Electrical Engineers, London 1994).
S. M. Evans, N. G. Giles, L. E. Halliburton, G. A. Slack, S. B. Schujman, and L. J. Schowalter, Appl. Phys. Lett. 88, 062112 (2006).
P. M. Mason, H. Przybylinska, G. D. Watkins, W. J. Choyke, and G. A. Slack, Phys. Rev. B: Condens. Matter 59, 1937 (1999).
V. A. Solmatov, I. V. Ilyin, A. A. Solmatova, E. N. Mokhov, and P. G. Baranov, J. Appl. Phys. 107, 113515 (2010).
S. B. Orlinskii, J. Schmidt, P. G. Baranov, M. Bicker- mann, B. M. Epelbaum, and A. Winnacker, Phys. Rev. Lett. 100, 256404 (2008).
E. N. Mokhov, O. V. Avdeev, I. S. Barash, T. Y. Chemekova, A. D. Roenkov, A. S. Segal, A. A. Wolfson, Yu. N. Makarov, M. G. Ramm, and H. Helava, J. Cryst. Growth 281, 93 (2005).
Th. Stiasny and R. Helbig, J. Appl. Phys. 79, 4152 (1996).
A. Halperin and A. A. Braner, Phys. Rev. 117, 408 (1960).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.A. Soltamov, I.V. Ilyin, A.A. Soltamova, D.O. Tolmachev, E.N. Mokhov, P.G. Baranov, 2011, published in Fizika Tverdogo Tela, 2011, Vol. 53, No. 6, pp. 1121–1125.
Rights and permissions
About this article
Cite this article
Soltamov, V.A., Ilyin, I.V., Soltamova, A.A. et al. Identification of nitrogen vacancies in an AlN single crystal: EPR and thermoluminescence investigations. Phys. Solid State 53, 1186–1190 (2011). https://doi.org/10.1134/S1063783411060333
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063783411060333