Skip to main content
SpringerLink
Log in

Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures

  • XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The effects of the residual photoconductivity in HgTe/CdHgTe (013) double quantum-well heterostructures are studied at T = 4.2 K. It is shown that the residual photoconductivity in this system has a bipolar character, i.e., both positive and negative persistent photoconductivity is present depending on the illumination wavelength.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.

Similar content being viewed by others

REFERENCES

  1. C. L. Kane and E. J. Mele, Phys. Rev. Lett. 95, 146802 (2005).

    Article  ADS  Google Scholar 

  2. B. A. Bernevig, T. L. Hughes, and S. C. Zhang, Science (Washington, DC, U. S.) 314, 1757 (2006).

    Article  ADS  Google Scholar 

  3. M. Konig, S. Wiedmann, C. Brune, A. Roth, H. Buhmann, L. W. Molenkamp, X.-L. Qi, and S.-C. Zhang, Science (Washington, DC, U. S.) 318, 766 (2007).

    Article  ADS  Google Scholar 

  4. M. Schultz, U. Merkt, A. Sonntag, U. Rössler, R. Winkler, T. Colin, P. Helgesen, T. Skauli, and S. Lovold, Phys. Rev. B 57, 14772 (1998).

    Article  ADS  Google Scholar 

  5. V. Ya. Aleshkin, V. I. Gavrilenko, D. M. Gaponova, A. V. Ikonnikov, K. V. Marem’yanin, S. V. Morozov, Yu. G. Sadof’ev, S. R. Johnson, and Y.-H. Yang, Semiconductors 39, 22 (2005).

    Article  ADS  Google Scholar 

  6. A. V. Ikonnikov, A. A. Lastovkin, K. E. Spirin, M. S. Zholudev, V. V. Rumyantsev, K. V. Maremyanin, A. V. Antonov, V. Ya. Aleshkin, V. I. Gavrilenko, S. A. Dvoretskii, N. N. Mikhailov, Yu. G. Sadofyev, and N. Samal, JETP Lett. 92, 756 (2010).

    Article  ADS  Google Scholar 

  7. V. V. Rumyantsev, D. V. Kozlov, S. V. Morozov, M. A. Fadeev, A. M. Kadykov, F. Teppe, V. S. Varavin, M. V. Yakushev, N. N. Mikhailov, S. A. Dvoretskii, and V. I. Gavrilenko, Semicond. Sci. Technol. 32, 095007 (2017).

    Article  ADS  Google Scholar 

  8. A. V. Ikonnikov, L. S. Bovkun, V. Ya. Aleshkin, M. Orlita, B. A. Piot, M. Potemski, S. S. Krishtopenko, C. A. Dvoretskii, N. N. Mikhailov, and V. I. Gavrilenko, in Proceedings of the 22nd International Symposium on Nanophysics and Nanoelectronics, March 12–15, 2018, Nizhnii Novgorod, Vol. 2, p. 635.

  9. M. V. Yakunin, S. S. Krishtopenko, S. M. Podgornykh, M. R. Popov, V. N. Neverov, F. Teppe, B. Jouault, W. Desrat, S. A. Dvoretskii, and N. N. Mikhailov, in Proceedings of the 22nd International Symposium on Nanophysics and Nanoelectronics, March 12–15, 2018, Nizhnii Novgorod, Vol. 2, p. 843.

  10. K. H. Yoo, R. L. Aggarwal, L. R. RamMohan, and O. K. Wu, J. Vac. Sci. Technol. A 8, 1194 (1990).

    Article  ADS  Google Scholar 

Download references

ACKNOWLEDGMENTS

This work was performed in the scope of fulfillment of the state order of the Institute for Physics of Microstructures of the Russian Academy of Sciences, theme 0035-2014-0201, and partially supported by the Russian Foundation for Basic Research, project no. 16-02-00672. The characterization and refinement of the structural parameters are performed under the support of the Presidential Grant of the Russian Federation for the State Support of Young Russian Scientists—Candidates of Science, project MK-4399.2018.2. The equipment of the Joint Usage Center of the Institute for Physics of Microstructures of the Russian Academy of Sciences is used in the work.

Author information

Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, 603950, Nizhny Novgorod, Russia

    K. E. Spirin, D. M. Gaponova, K. V. Marem’yanin, V. V. Rumyantsev & V. I. Gavrilenko

  2. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    N. N. Mikhailov & S. A. Dvoretsky

Authors
  1. K. E. Spirin
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. D. M. Gaponova
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. K. V. Marem’yanin
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. V. Rumyantsev
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. V. I. Gavrilenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. N. N. Mikhailov
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. S. A. Dvoretsky
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to K. E. Spirin.

Additional information

Translated by N. Korovin

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Spirin, K.E., Gaponova, D.M., Marem’yanin, K.V. et al. Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures. Semiconductors 52, 1586–1589 (2018). https://doi.org/10.1134/S1063782618120230

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782618120230

Keywords

Search

Navigation