Abstract
The results of investigations of the effect of the initial conditions (nitridation of the Si(111) substrate, the GaN growth temperature, and the stoichiometry of GaN growth) on the growth kinetics and the GaN/Si(111)-layer polarity under nitrogen-plasma-assisted molecular-beam epitaxy are presented. It is experimentally established that the optimal initial condition for GaN epitaxy on Si(111) substrates is high-temperature nitridation of the Si(111) substrate carried out immediately before GaN growth. It is shown that it is possible to control the polarity of GaN by means of appropriate choice of the growth under conditions with N or Ga enrichment at the initial stage of GaN/Si(111) epitaxy.
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ACKNOWLEDGMENTS
The growth experiments were carried out within the framework of fulfilling the state task of the Ministry of Education and Science of the Russian Federation no. 16.9789.2017/BCh. Morphological and electrical investigations of the samples were implemented in the framework of the general agreement about scientific research activity between Skoltekh and St. Petersburg National Research Academic University, Russian Academy of Sciences, (no. 3663-MRA, project 4).
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Translated by V. Bukhanov
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Mizerov, A.M., Timoshnev, S.N., Sobolev, M.S. et al. Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy. Semiconductors 52, 1529–1533 (2018). https://doi.org/10.1134/S1063782618120175
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DOI: https://doi.org/10.1134/S1063782618120175