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Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

  • XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015
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Abstract

Influence of the Ge layer thickness and annealing conditions on the parameters of relaxed Ge/Si(001) layers grown by molecular beam epitaxy via two-stage growth is investigated. The dependences of the threading dislocation density and surface roughness on the Ge layer thickness, annealing temperature and time, and the presence of a hydrogen atmosphere are obtained. As a result of optimization of the growth and annealing conditions, relaxed Ge/Si(001) layers which are thinner than 1 μm with a low threading dislocation density on the order of 107 cm–2 and a root mean square roughness of less than 1 nm are obtained.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 603950, Russia

    D. V. Yurasov, V. M. Daniltsev, A. V. Novikov, E. V. Skorokhodov, M. V. Shaleev & P. A. Yunin

  2. Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russia

    D. V. Yurasov, A. I. Bobrov, A. V. Novikov, D. A. Pavlov & P. A. Yunin

Authors
  1. D. V. Yurasov
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  2. A. I. Bobrov
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  3. V. M. Daniltsev
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  4. A. V. Novikov
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  5. D. A. Pavlov
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  6. E. V. Skorokhodov
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  7. M. V. Shaleev
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  8. P. A. Yunin
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Correspondence to D. V. Yurasov.

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Original Russian Text © D.V. Yurasov, A.I. Bobrov, V.M. Daniltsev, A.V. Novikov, D.A. Pavlov, E.V. Skorokhodov, M.V. Shaleev, P.A. Yunin, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 11, pp. 1463–1468.

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Yurasov, D.V., Bobrov, A.I., Daniltsev, V.M. et al. Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy. Semiconductors 49, 1415–1420 (2015). https://doi.org/10.1134/S1063782615110263

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  • DOI: https://doi.org/10.1134/S1063782615110263

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