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Features of the electrical conductivity of TlInSe2 under photoexcitation and X-ray excitation

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Abstract

The current–voltage characteristics of TlInSe2 crystals under photoexcitation and X-ray excitation are studied. The parameters of the trap, which are equal to N t = 5 × 1016 cm–3, n t = 4.5 × 1012 cm–3, and ΔE t = 0.42 eV, are calculated. The calculated values of N t and n t before and after X-ray excitation are equal to 3 × 1016 cm–3 and 3.2 × 1012 cm–3, respectively. The dependences of the X-ray conductances on the radiation intensity are studied for TlInSe2 crystals at various accelerating voltages V a and it is determined that the X-ray conductance Kσ decreases exponentially as the accelerating voltage V a and radiation dose increase.

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Authors and Affiliations

  1. Institute of Radiation Problems of Azerbaijan, Azerbaijan National Academy of Sciences, F. Agaev 9, Az-1143, Baku, Azerbaijan

    R. S. Madatov, A. I. Najafov, Yu. M. Mustafayev & M. R. Gazanfarov

  2. Azerbaijan National Aviation Academy, Bina 25th km, Az-1045, Baku, Azerbaijan

    R. S. Madatov

  3. Ganja State University, ul. Khatai 187, Az-2000, Ganja, Azerbaijan

    I. M. Movsumova

Authors
  1. R. S. Madatov
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  2. A. I. Najafov
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  3. Yu. M. Mustafayev
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  4. M. R. Gazanfarov
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  5. I. M. Movsumova
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Correspondence to R. S. Madatov.

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Original Russian Text © R.S. Madatov, A.I. Najafov, Yu.M. Mustafayev, M.R. Gazanfarov, I.M. Movsumova, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 9, pp. 1202–1205.

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Madatov, R.S., Najafov, A.I., Mustafayev, Y.M. et al. Features of the electrical conductivity of TlInSe2 under photoexcitation and X-ray excitation. Semiconductors 49, 1166–1169 (2015). https://doi.org/10.1134/S1063782615090195

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  • DOI: https://doi.org/10.1134/S1063782615090195

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