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Synchrotron study of the formation of nanoclusters in Al2O3/SiO x /Al2O3/SiO x /…/Si(100) multilayer nanostructures

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

Al2O3/SiO x /Al2O3/SiO x /…/Si(100) multilayer nanoperiodic structures (MNS) are studied by X-ray absorption near-edge structure spectroscopy (XANES). Experimental XANES spectroscopy spectra are obtained using synchrotron radiation. The formation of Si nanoclusters in the surface layers of the structures during their high-temperature annealing is observed. The structures featured intense size-dependent photoluminescence in the wavelength region near 800 nm. At the same time, it is shown that the formation of aluminum silicates is possible. The inversion effect of the intensity of the XANES spectra during the interaction of synchrotron radiation with MNSs is revealed.

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Authors and Affiliations

  1. Voronezh State University, Universitetskaya pl. 1, Voronezh, 394006, Russia

    S. Yu. Turishchev, V. A. Terekhov, D. A. Koyuda, K. N. Pankov & E. P. Domashevskaya

  2. Nizhni Novgorod State University, pr. Gagarina 23, Nizhni Novgorod, 603950, Russia

    A. V. Ershov, D. A. Grachev & A. I. Mashin

Authors
  1. S. Yu. Turishchev
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  2. V. A. Terekhov
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  3. D. A. Koyuda
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  4. K. N. Pankov
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  5. A. V. Ershov
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  6. D. A. Grachev
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  7. A. I. Mashin
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  8. E. P. Domashevskaya
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Corresponding author

Correspondence to S. Yu. Turishchev.

Additional information

Original Russian Text © S.Yu. Turishchev, V.A. Terekhov, D.A. Koyuda, K.N. Pankov, A.V. Ershov, D.A. Grachev, A.I. Mashin, E.P. Domashevskaya, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 10, pp. 1327–1334.

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Turishchev, S.Y., Terekhov, V.A., Koyuda, D.A. et al. Synchrotron study of the formation of nanoclusters in Al2O3/SiO x /Al2O3/SiO x /…/Si(100) multilayer nanostructures. Semiconductors 47, 1316–1323 (2013). https://doi.org/10.1134/S106378261310028X

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  • DOI: https://doi.org/10.1134/S106378261310028X

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