Abstract
The experimental current-voltage characteristics and dependences of the external quantum yield on the current density of light-emitting diodes based on InGaN/GaN multiple quantum wells for the wide temperature range T = 10–400 K are presented. It is shown that, at low-temperatures T < 100 K, the injection of holes into the quantum wells occurs from localized acceptor states. The low-temperature injection of electrons into p-GaN occurs due to quasi-ballistic transport in the region of multiple quantum wells. An increase in temperature leads to an increase in the current which is governed by thermally activated hole and electron injection from the allowed bands of GaN.
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Original Russian Text © I.A. Prudaev, I.Yu. Golygin, S.B. Shirapov, I.S. Romanov, S.S. Khludkov, O.P. Tolbanov, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 10, pp. 1391–1395.
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Prudaev, I.A., Golygin, I.Y., Shirapov, S.B. et al. Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells. Semiconductors 47, 1382–1386 (2013). https://doi.org/10.1134/S1063782613100230
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DOI: https://doi.org/10.1134/S1063782613100230