Abstract
The deposition of a multilayer buffer layer that includes a high-temperature AlN layer grown at a temperature above 1100°C has made it possible to reduce the dislocation density in a GaN layer by 1.5–2 orders of magnitude to values in the range from 9 × 108 to 1 × 109 cm−2, compared with the case of growth on a thin low-temperature AlN nucleation layer. The decrease in the dislocation density causes a substantial increase in the electron mobility in the GaN layers to 600–650 cm2 V−1 s−1, which is in agreement with the results of calculations and is indicative of the high crystalline perfection of the layers.
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Original Russian Text © A.N. Alexeev, D.M. Krasovitsky, S.I. Petrov, V.P. Chaly, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 11, pp. 1460–1462.
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Alexeev, A.N., Krasovitsky, D.M., Petrov, S.I. et al. Deposition of GaN Layers with a lowered dislocation density by molecular-beam epitaxy. Semiconductors 46, 1429–1431 (2012). https://doi.org/10.1134/S1063782612110024
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DOI: https://doi.org/10.1134/S1063782612110024