Abstract
The results of studying the electrical properties of Hg3In2Te6 crystals irradiated with electrons with the energy E e = 18 MeV and the dose D = 4 × 1016 cm−2 are reported. It is shown that, irrespective of the charge-carrier concentration in the initial material, the Hg3In2Te6 samples acquire the charge-carrier concentration (1.6–1.8) × 1013 cm−3 after irradiation. The phenomenon of Fermi level pinning in an irradiated material is discussed. The initial charge-carrier concentration, which remains virtually unchanged after irradiation and which ensures the high radiation resistance of Hg3In2Te6 crystals, corresponds to a compensated material, similar to an intrinsic semiconductor at T > 260 K.
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Original Russian Text © O.G. Grushka, V.T. Maslyuk, S.M. Chupyra, O.M. Mysliuk, S.V. Bilichuk, I.I. Zabolotskiy, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 3, pp. 327–329.
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Grushka, O.G., Maslyuk, V.T., Chupyra, S.M. et al. The effect of irradiation with electrons on the electrical parameters of Hg3In2Te6 . Semiconductors 46, 312–314 (2012). https://doi.org/10.1134/S1063782612030128
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DOI: https://doi.org/10.1134/S1063782612030128