Abstract
InAs/GaAs multilayered heterostructures containing dense arrays of the low-defect partially relaxed InAs nanoclusters larger than defect-free quantum dots are fabricated by metal-organic chemical vapor deposition in an atmospheric-pressure reactor. The structures have intense photoconductivity in the wavelength range of 1–2 μm at room temperature. The detectivity of fabricated prototypes of photodetectors is D* = 109 cm Hz1/2 W−1. The relaxation time of photoconductivity at a wavelength of 1.5 μm is less than 10 ns.
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References
S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, Phys. Status Solidi C 3, 439 (2006).
H. Lim, S. Tsao, W. Zhang, and M. Razeghi, Appl. Phys. Lett. 90, 131112 (2007).
M. J. Meisner, J. Vaillancourt, and X. Lu, Semicond. Sci. Technol. 23, 095016 (2008).
L. D. Moldavskaya, N. V. Vostokov, D. M. Gaponova, V. M. Danil’tsev, M. N. Drozdov, Yu. N. Drozdov, and V. I. Shashkin, Fiz. Tekh. Poluprovodn. 42, 101 (2008) [Semiconductors 42, 99 (2008)].
B. S. Passmore, J. Wu, M. O. Manasreh, and G. J. Salamo, Appl. Phys. Lett. 91, 233508 (2007).
B. S. Passmore, J. Wu, M. O. Manasreh, V. P. Kunets, P. M. Lytvyn, and G. J. Salamo, IEEE Electron. Dev. Lett. 29, 224 (2008).
A. E. Zhukov, A. P. Vasiliev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, A. Yu. Egorov, V. A. Odnoblyudov, N. A. Maleev, E. V. Nikitina, N. V. Krzhizhanovskaya, A. G. Gladyshev, Yu. M. Shernyakov, M. V. Maksimov, N. N. Ledentsov, V. M. Ustinov, and Zh. I. Alferov, Fiz. Tekh. Poluprovodn. 37, 1461 (2003) [Semiconductors 37, 1411 (2003)].
M. N. Drozdov, V. M. Danil’tsev, L. D. Moldavskaya, and V. I. Shashkin, Pis’ma Zh. Tekh. Fiz. 34(1), 3 (2008) [Tech. Phys. Lett. 34, 1 (2008)].
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Original Russian Text © A.V. Antonov, N.V. Vostokov, M.N. Drozdov, L.D. Moldavskaya, V.I. Shashkin, O.I. Khrykin, A.N. Yablonskiy, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 11, pp. 1511–1513.
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Antonov, A.V., Vostokov, N.V., Drozdov, M.N. et al. Photoconductivity of InAs/GaAs structures with InAs nanoclusters in the near-infrared region. Semiconductors 44, 1464–1466 (2010). https://doi.org/10.1134/S1063782610110163
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DOI: https://doi.org/10.1134/S1063782610110163