Abstract
The possibility of amplification of terahertz-range electromagnetic waves due to optical transitions between a two-dimensional continuum and shallow-level donor states in GaAs/AlGaAs superlattices with selectively δ-doped quantum wells is analyzed theoretically. The population inversion required for the gain is attained under the conditions of vertical transport in the superlattice due to the hybridization of states in neighboring quantum wells coupled via electron tunneling through the barrier. It is shown that, at a doping level of 5 × 1010 cm−2 per period, the gain can be as high as 50 cm−1 at wavelengths 100–120 μm. The current density under operating conditions is ∼50 A/cm2.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
C. Gmachl, F. Capasso, D. L. Sivco, and A. Y. Cho, Rep. Prog. Phys. 64, 1533 (2001).
R. Köhler, A. Tredicucci, F. Beltram, et al., Nature 417, 156 (2002).
B. S. Williams, H. Callebaut, S. Kumar, et al., Appl. Phys. Lett. 82, 1015 (2003).
S. G. Pavlov, R. Kh. Zhukavin, E. E. Orlova, et al., Phys. Rev. Lett. 84, 5220 (2000).
N. A. Bekin, R. Kh. Zhukavin, K. A. Kovalevskiĭ, et al., Fiz. Tekh. Poluprovodn. 39, 76 (2005) [Semiconductors 39, 67 (2005)].
V. N. Shastin, N. A. Bekin, R. Kh. Zhukavin, et al., in Proceedings of the Symposium “Nanophysics and Nanoelectronics,” Nizhni Novgorod, Russia, 2005, Vol. 1, p. 38.
N. A. Bekin and V. N. Shastin, Izv. Ross. Akad. Nauk, Ser. Fiz. 71, 104 (2007).
N. A. Bekin, Fiz. Tekh. Poluprovodn. 39, 463 (2005) [Semiconductors 39, 439 (2005)].
I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).
M. El. Allali, C. B. Sørensen, E. Veje, and P. Tidemand-Petersson, Phys. Rev. B 48, 4398 (1993).
H. J. Lee, L. Y. Juravel, J. C. Woolley, and A. J. Springthorpe, Phys. Rev. B 21, 659 (1980).
H. Callebaut and Q. Hu, J. Appl. Phys. 98, 104505 (2005).
S. Kumar, B. S. Williams, S. Kohen, et al., Appl. Phys. Lett. 84, 2494 (2004).
U. Fano, Phys. Rev. 124, 1866 (1961).
S. Kumar, B. S. Williams, Q. Hu, and J. L. Reno, Appl. Phys. Lett., 88, 121123 (2006).
C. Walther, G. Scalari, J. Faist, et al., Appl. Phys. Lett. 89, 231121 (2006).
L. Mahler, A. Tredicucci, R. Köhler, et al., Appl. Phys. Lett. 87, 181101 (2005).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © N.A. Bekin, V.N. Shastin, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 5, pp. 622–629.
Rights and permissions
About this article
Cite this article
Bekin, N.A., Shastin, V.N. A cascade laser on shallow-donor transitions in δ-Doped GaAs/AlGaAs superlattices. Semiconductors 42, 608–615 (2008). https://doi.org/10.1134/S1063782608050217
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782608050217