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Nature of damped current oscillations in the formation of a static acoustoelectric domain in a n-InGaAs/GaAs quantum-well heterostructure

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Abstract

It is shown experimentally that reflection of the acoustic flux from the sample borders under the conditions of formation of a static acoustoelectric domain in a n-InGaAs/GaAs quantum-well heterostructure in a lateral electric field substantially affects the duration of the incubation period of domain formation and the shape and amplitude of current oscillations.

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Authors and Affiliations

  1. Institute of Physics, National Academy of Sciences of Ukraine, pr. Nauki 144, Kiev, 03680, Ukraine

    P. A. Belevskiĭ, M. N. Vinoslavskiĭ, V. N. Poroshin & I. V. Stroganova

Authors
  1. P. A. Belevskiĭ
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  2. M. N. Vinoslavskiĭ
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  3. V. N. Poroshin
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  4. I. V. Stroganova
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Correspondence to P. A. Belevskiĭ.

Additional information

Original Russian Text © P.A. Belevskiĭ, M.N. Vinoslavskiĭ, V.N. Poroshin, I.V. Stroganova, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 5, pp. 604–607.

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Belevskiĭ, P.A., Vinoslavskiĭ, M.N., Poroshin, V.N. et al. Nature of damped current oscillations in the formation of a static acoustoelectric domain in a n-InGaAs/GaAs quantum-well heterostructure. Semiconductors 42, 589–592 (2008). https://doi.org/10.1134/S1063782608050175

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  • DOI: https://doi.org/10.1134/S1063782608050175

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