Abstract
Development of immersion-lens photodiodes based on GaInAsSb alloyss with long-wavelength photosensitivity cutoffs at 2.05 and 2.25 μm (20°C) is reported. Spectral and current-voltage characteristics and the effect of the design of a photodiode on its detectivity in the temperature range 20–140°C are discussed.
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Original Russian Text © S.A. Karandashev, B.A. Matveev, M.A. Remennyi, A.A. Shlenskii, L.S. Lunin, V.I. Ratushnyi, A.V. Koryuk, N.G. Tarakanova, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 11, pp. 1389–1394.
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Karandashev, S.A., Matveev, B.A., Remennyi, M.A. et al. Properties of GaInAsSb/GaSb (λ = 1.8–2.3 μm) immersion lens photodiodes at 20–140°C. Semiconductors 41, 1369–1374 (2007). https://doi.org/10.1134/S1063782607110188
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DOI: https://doi.org/10.1134/S1063782607110188