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Scaling in the quantum Hall effect regime in n-InGaAs/GaAs nanostructures

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Abstract

The longitudinal ρ xx (B) and Hall ρ xy (B) magnetoresistances are investigated experimentally in the integer quantum Hall effect (QHE) regime in n-InGaAs/GaAs double quantum well nanostructures in the range of magnetic fields B = (0–16) T and temperatures T = (0.05–70) K before and after IR illumination. The results are evaluated within the scaling hypothesis with regard to electron-electron interaction.

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Authors and Affiliations

  1. Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. S. Kovalevskoi 18, Yekaterinburg, 620041, Russia

    Yu. G. Arapov, S. V. Gudina, A. S. Klepikova, V. N. Neverov, S. G. Novokshonov, G. I. Kharus, N. G. Shelushinina & M. V. Yakunin

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  1. Yu. G. Arapov
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  2. S. V. Gudina
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  3. A. S. Klepikova
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  4. V. N. Neverov
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  5. S. G. Novokshonov
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  6. G. I. Kharus
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  7. N. G. Shelushinina
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  8. M. V. Yakunin
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Correspondence to V. N. Neverov.

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Original Russian Text © Yu.G. Arapov, S.V. Gudina, A.S. Klepikova, V.N. Neverov, S.G. Novokshonov, G.I. Kharus, N.G. Shelushinina, M.V. Yakunin, 2013, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2013, Vol. 144, No. 1, pp. 166–175.

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Arapov, Y.G., Gudina, S.V., Klepikova, A.S. et al. Scaling in the quantum Hall effect regime in n-InGaAs/GaAs nanostructures. J. Exp. Theor. Phys. 117, 144–152 (2013). https://doi.org/10.1134/S1063776113080116

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