Abstract
The photocurrent spectra of p-GaAs samples and a p-InGaAs/GaAsP quantum-well heterostructure doped with shallow acceptors (C, Be, Zn) are investigated. Fano resonances associated with the ground and excited acceptor states are revealed and analyzed. It is found that sharp change in dielectric constant in the GaAs reststrahlen region strongly affects the lineshape of the Fano resonance associated with the acceptor ground state.
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Original Russian Text © V.Ya. Aleshkin, A.V. Antonov, V.I. Gavrilenko, L.V. Gavrilenko, B.N. Zvonkov, 2009, published in Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2009, Vol. 136, No. 3, pp. 543–549.
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Aleshkin, V.Y., Antonov, A.V., Gavrilenko, V.I. et al. Fano resonances in the impurity photocurrent spectra of GaAs samples and an InGaAs/GaAsP quantum-well heterostructure doped with shallow acceptors. J. Exp. Theor. Phys. 109, 466–471 (2009). https://doi.org/10.1134/S106377610909012X
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DOI: https://doi.org/10.1134/S106377610909012X