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The Effect of an N2 Additive on the GaAs Etching Rate in CF2Cl2 Plasma

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Abstract

The kinetics of GaAs etching in CF2Cl2 and CF2Cl2/N2 is investigated. It is shown that the shape of the dependences of the etching rate on the gas flow rate is determined by the energy of the ions bombarding the treated surface. It is demonstrated that, when a plasma-forming gas is diluted in a ratio of 1/1, the etching rate of the sample decreases by a factor of approximately 1.6. An increase in power (Wrf or Wbias) leads to significant changes in the GaAs etching rate.

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FUNDING

The work was supported financially by the Ministry of Education and Science of the Russian Federation (project no. 3.1371.2017/4.6).

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Authors and Affiliations

  1. Research Institute of Thermodynamics and Kinetics of Chemical Processes, Ivanovo State University of Chemistry and Technology, 153000, Ivanovo, Russia

    S. A. Pivovarenok

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  1. S. A. Pivovarenok
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Correspondence to S. A. Pivovarenok.

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Translated by Z. Smirnova

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Pivovarenok, S.A. The Effect of an N2 Additive on the GaAs Etching Rate in CF2Cl2 Plasma. Russ Microelectron 48, 236–239 (2019). https://doi.org/10.1134/S1063739719030089

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  • DOI: https://doi.org/10.1134/S1063739719030089

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